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2N6491

2N6491 Description

The 2N6491 is a PNP single bipolar transistor manufactured by Harris Corporation. It features a frequency transition of 5MHz, a maximum collector current (Ic) of 15A, and a Vce saturation of 3.5V at 5A and 15A. The device has a collector-emitter breakdown voltage of 80V and a maximum power rating of 1.8W. The DC current gain (hFE) is a minimum of 20 at 5A and 4V. The 2N6491 is available in a through-hole mounting type and is packaged in bulk. It has a moisture sensitivity level of 1 (unlimited), indicating no moisture sensitivity.

2N6491 Features

• 5MHz frequency transition for high-speed switching
• 15A maximum collector current for high power applications
• 3.5V Vce saturation for low power dissipation
• 80V collector-emitter breakdown voltage for robust operation
• 1.8W maximum power rating for efficient performance
• 20 minimum DC current gain (hFE) for reliable amplification
• Through-hole mounting type for easy integration
• Bulk packaging for cost-effectiveness
• Moisture sensitivity level 1 for unlimited storage time

2N6491 Applications

The 2N6491 is ideal for a variety of applications due to its high power handling, low saturation voltage, and high-frequency capabilities. Some specific use cases include:

1. Power amplifiers in audio systems
2. Switching regulators and power supplies
3. Motor control and drive circuits
4. RF power amplifiers in communication systems
5. High-current signal amplification in industrial control systems

Conclusion of 2N6491

The 2N6491 is a versatile PNP single bipolar transistor that offers high power handling, low saturation voltage, and high-frequency performance. Its unique combination of features makes it an excellent choice for a wide range of applications, including power amplifiers, switching regulators, motor control, and RF power amplification. With its robust specifications and reliable performance, the 2N6491 stands out as a top choice for demanding electronics applications.