Infineon Technologies_2EDN8524FXTMA1
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Infineon Technologies
2EDN8524FXTMA1

730-2EDN8524FXTMA1
PDF Datasheet
IC GATE DRVR LOW-SIDE DSO8
26 Weeks

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APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Latch-Up Proof
Yes
PPAP
No
Gate Type
N-Channel MOSFET
Product Status
Active
Automotive
No
Special Features
Current Limit|Undervoltage Lockout
Supplier Package
DSO
Package / Case
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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2EDN8524FXTMA1 Description

2EDN8524FXTMA1 Description

The 2EDN8524FXTMA1 is a high-performance, low-side gate driver IC from Infineon Technologies, designed for driving high-side and low-side MOSFETs in a wide range of applications. This IC features two independent channels, each capable of driving a MOSFET with a peak output current of 5A. The device operates over a wide supply voltage range of 4.5V to 20V, making it suitable for various power electronics applications.

2EDN8524FXTMA1 Features

  • Series: EiceDriver™ - A series of gate drivers known for their high performance and reliability.
  • Number of Drivers: 2 - Independent channels for driving high-side and low-side MOSFETs.
  • Rise/Fall Time (Typ): 5.3ns/4.5ns - Fast switching speeds for efficient power management.
  • Logic Voltage - VIL, VIH: 1.2V, 1.9V - Compatible with a wide range of logic levels.
  • Voltage - Supply: 4.5V ~ 20V - Operates over a wide voltage range for flexibility in various applications.
  • Current - Peak Output (Source, Sink): 5A, 5A - Capable of driving high-current MOSFETs.
  • Mounting Type: Surface Mount - Ideal for space-constrained applications.
  • Package: Tape & Reel (TR) - Suitable for automated assembly processes.
  • RoHS Status: ROHS3 Compliant - Environmentally friendly and suitable for use in RoHS-compliant products.
  • REACH Status: REACH Unaffected - Compliant with European Union regulations on chemicals.

2EDN8524FXTMA1 Applications

The 2EDN8524FXTMA1 is ideal for a variety of applications where high-performance gate driving is required:

  1. Power Management: In power supply units, battery management systems, and motor control applications.
  2. Automotive Electronics: For driving power MOSFETs in electric and hybrid vehicles, including traction inverters and battery management.
  3. Industrial Control: In motor drives, solar inverters, and other high-power industrial applications.
  4. Renewable Energy: For driving MOSFETs in wind turbines and solar power inverters.

Conclusion of 2EDN8524FXTMA1

The 2EDN8524FXTMA1 is a versatile and high-performance gate driver IC from Infineon Technologies, offering fast switching speeds, high peak output current, and a wide operating voltage range. Its independent channels, RoHS compliance, and REACH unaffected status make it an ideal choice for a wide range of power electronics applications, including power management, automotive electronics, industrial control, and renewable energy systems. With its advanced features and reliable performance, the 2EDN8524FXTMA1 stands out as a superior solution for demanding gate driving requirements.

FAQ

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Yes. 2EDN8524FXTMA1 currently has 13 pricing tier(s), starting from 1 units.
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Availability (In Stock : 4963 )
Quantity Unit Price Ext. Price
1+ $0.72160 $0.72
10+ $0.51304 $5.13
25+ $0.46147 $11.54
100+ $0.40489 $40.49
250+ $0.37791 $94.48
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