Infineon Technologies_2N7002DWH6327XTSA1
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Infineon Technologies
2N7002DWH6327XTSA1

289-2N7002DWH6327XTSA1
PDF Datasheet
MOSFET 2N-CH 60V 0.3A SOT363
22 Weeks

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Tech Specifications

Configuration
2 N-Channel (Dual)
Typical Turn-Off Delay Time (ns)
5.5
Maximum Gate Source Leakage Current (nA)
10
Input Capacitance (Ciss) (Max) @ Vds
20pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
0.6nC @ 10V
Typical Rise Time (ns)
3.3
PPAP
Unknown
Channel Mode
Enhancement
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2N7002DWH6327XTSA1 Description

2N7002DWH6327XTSA1 Description

The 2N7002DWH6327XTSA1 is a high-performance MOSFET from Infineon Technologies, designed for logic level gate applications. It is part of the OptiMOS™ series, known for its superior performance and reliability. This MOSFET is built using advanced MOSFET (Metal Oxide) technology and is offered in a compact SOT363 package, making it ideal for space-constrained applications.

2N7002DWH6327XTSA1 Features

  • Logic Level Gate: The 2N7002DWH6327XTSA1 is designed for logic level gate applications, ensuring compatibility with standard logic voltage levels.
  • Low Input Capacitance: With a maximum input capacitance (Ciss) of 20pF @ 25V, this MOSFET offers fast switching speeds and low power consumption.
  • Low Gate Charge: A maximum gate charge (Qg) of 0.6nC @ 10V contributes to the device's high-speed performance.
  • Low Rds On: The maximum Rds On of 3Ohm @ 500mA, 10V ensures low conduction losses and high efficiency.
  • High Drain to Source Voltage: A Vdss of 60V allows the device to handle high voltage applications.
  • Continuous Drain Current: Capable of handling a continuous drain current (Id) of 300mA @ 25°C, making it suitable for various power management applications.
  • Surface Mount: The surface mount packaging allows for easy integration into modern PCB designs.

2N7002DWH6327XTSA1 Applications

The 2N7002DWH6327XTSA1 is ideal for a wide range of applications due to its high performance and compact form factor. Some specific use cases include:

  • Power Management: Its low Rds On and high Vdss make it suitable for power management circuits in consumer electronics.
  • Automotive Electronics: The device's ability to handle high voltages and currents makes it ideal for automotive electronics, such as power windows and lighting systems.
  • Industrial Control: Its high-speed switching capabilities make it suitable for industrial control systems that require precise and fast control of power.

Conclusion of 2N7002DWH6327XTSA1

The 2N7002DWH6327XTSA1 from Infineon Technologies is a high-performance MOSFET designed for logic level gate applications. Its unique combination of low input capacitance, low gate charge, and high voltage and current handling capabilities make it an excellent choice for a wide range of applications, including power management, automotive electronics, and industrial control. With its compact SOT363 package, the 2N7002DWH6327XTSA1 offers a space-saving solution for designers looking to maximize performance in a small footprint.

FAQ

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