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64-2092PBF

64-2092PBF Description

The 64-2092PBF by Infineon Technologies is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a 55V drain-to-source voltage (Vdss) and 75A continuous drain current (Id), it delivers robust performance in power management circuits. Packaged in a D2PAK (TO-263) surface-mount form factor, this MOSFET features a low on-resistance (Rds(on)) of 6.5mΩ at 10V gate drive, minimizing conduction losses. Although marked as obsolete, its specifications remain competitive for legacy designs requiring high-current handling and thermal stability.

64-2092PBF Features

• Low Rds(on): 6.5mΩ @ 66A, 10V ensures reduced power dissipation.
• High Current Capacity: 75A (Tc) rating suits demanding loads.
• Fast Switching: Gate charge (Qg) of 110nC @ 10V balances speed and efficiency.
• Thermal Performance: 170W max power dissipation (Tc) with robust D2PAK packaging.
• Wide Vgs Range: ±20V gate-source voltage tolerance enhances design flexibility.
• Reliability: REACH unaffected and MSL 1 (unlimited) moisture sensitivity for industrial environments.

64-2092PBF Applications

Ideal for:

• DC-DC Converters: Low Rds(on) improves efficiency in buck/boost circuits.
• Motor Drives: High current handling for brushed/brushless motor control.
• Power Supplies: Used in SMPS designs for servers, telecom, and industrial equipment.
• Automotive Systems: Suitable for auxiliary power modules (obsolete status may limit new designs).
• Battery Management: Efficient switching in high-current discharge paths.

Conclusion of 64-2092PBF

The 64-2092PBF excels in high-power applications with its low conduction losses and thermal robustness. While obsolete, its HEXFET® technology and D2PAK package make it a viable choice for legacy or cost-sensitive projects requiring reliable performance. Engineers should evaluate alternatives for new designs but can leverage this MOSFET’s proven specs in existing systems.