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AUIRF1404S
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AUIRF1404S Description
AUIRF1404S Description
The AUIRF1404S from Infineon Technologies is an N-channel HEXFET® MOSFET designed for high-efficiency power switching applications. With a 40V drain-to-source voltage (Vdss) and 75A continuous drain current (Id), it delivers robust performance in demanding environments. The device features an ultra-low on-resistance (Rds(on)) of 4mΩ at 10V gate drive, minimizing conduction losses. Its D2PAK (TO-263) package ensures efficient thermal dissipation, supporting a maximum power dissipation of 200W (Tc). Although marked as obsolete, it remains a reliable choice for legacy designs requiring high-current handling and low switching losses.
AUIRF1404S Features
- Low Rds(on): 4mΩ @ 95A, 10V for reduced power loss.
- High Current Capability: 75A continuous drain current (Tc) for heavy-load applications.
- Fast Switching: Optimized gate charge (Qg = 200nC @ 10V) and input capacitance (Ciss = 7360pF @ 25V) for efficient high-frequency operation.
- Robust Construction: ±20V gate-source voltage (Vgs) tolerance and REACH/ROHS3 compliance for environmental and reliability standards.
- Thermal Efficiency: D2PAK package with 200W (Tc) power dissipation for superior heat management.
AUIRF1404S Applications
- Power Supplies: High-efficiency DC-DC converters and SMPS due to low Rds(on) and fast switching.
- Motor Control: Ideal for H-bridge configurations in automotive and industrial motor drives.
- Battery Management: Suitable for high-current discharge protection in Li-ion systems.
- Load Switching: Robust performance in high-current relay replacements or power distribution modules.
Conclusion of AUIRF1404S
The AUIRF1404S excels in high-current, low-loss applications, offering a balance of thermal performance, efficiency, and durability. While obsolete, its HEXFET® technology and D2PAK packaging make it a strong candidate for legacy or cost-sensitive designs requiring reliable power switching. Engineers should evaluate alternative modern equivalents for new projects but can rely on this MOSFET for proven performance in existing systems.



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