Infineon Technologies_AUIRF2804STRL

Infineon Technologies
AUIRF2804STRL  
Single FETs, MOSFETs

AUIRF2804STRL
278-AUIRF2804STRL
Ersa
Infineon Technologies-AUIRF2804STRL-datasheets-7585728.pdf
MOSFET N-CH 40V 195A D2PAK
In Stock : 1975

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AUIRF2804STRL Description

AUIRF2804STRL Description

The AUIRF2804STRL is a high-performance MOSFET N-CH 40V 195A D2PAK from Infineon Technologies. It is part of the HEXFET® series and is designed for applications requiring high power and efficiency. With its advanced MOSFET (Metal Oxide) technology, the AUIRF2804STRL offers superior performance and reliability.

AUIRF2804STRL Features

  • Input Capacitance (Ciss): 6450 pF @ 25 V, ensuring fast switching speeds and reduced power consumption.
  • Gate Charge (Qg): 240 nC @ 10 V, minimizing gate drive requirements and improving efficiency.
  • Drain to Source Voltage (Vdss): 40 V, suitable for high-voltage applications.
  • Power Dissipation (Max): 300W (Tc), enabling high-power operation.
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V, providing low on-resistance and high efficiency.
  • Vgs(th) (Max) @ Id: 4V @ 250µA, ensuring reliable operation across a wide range of input voltages.
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc), suitable for high-current applications.
  • Drive Voltage (Max Rds On, Min Rds On): 10V, simplifying gate drive requirements.
  • Mounting Type: Surface Mount, ideal for compact designs.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), ensuring long-term reliability in various environments.
  • RoHS Status: ROHS3 Compliant, meeting environmental regulations.
  • REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.

AUIRF2804STRL Applications

The AUIRF2804STRL is ideal for a wide range of high-power applications, including:

  1. Industrial Motor Control: Its high current and voltage ratings make it suitable for motor drive applications.
  2. Power Supplies: The low on-resistance and high efficiency of the AUIRF2804STRL make it an excellent choice for power supply designs.
  3. Automotive Applications: The high power dissipation and robustness of the device make it suitable for automotive electronics, such as electric vehicle charging systems.
  4. Renewable Energy Systems: The AUIRF2804STRL can be used in solar inverters and wind power systems due to its high power capabilities.

Conclusion of AUIRF2804STRL

The AUIRF2804STRL from Infineon Technologies is a powerful and efficient MOSFET designed for high-power applications. Its advanced technology, low on-resistance, and high current and voltage ratings make it an ideal choice for a wide range of applications, including industrial motor control, power supplies, automotive electronics, and renewable energy systems. With its RoHS and REACH compliance, the AUIRF2804STRL is not only a high-performance device but also an environmentally responsible choice for your next project.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Typical Drain Source Resistance @ 25°C (mOhm)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Material
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Qualification
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

AUIRF2804STRL Documents

Download datasheets and manufacturer documentation for AUIRF2804STRL

Ersa AUIRF2804(S,L)      
Ersa Package Drawing Update 19/Aug/2015      
Ersa Part Number Guide      
Ersa AUIRF2804(S,L)      
Ersa Mult Dev Label Chgs 8/Sep/2021      
Ersa RoHS Certificate      

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