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AUIRF2907Z

AUIRF2907Z Description

The AUIRF2907Z from Infineon Technologies is a high-performance N-channel HEXFET® power MOSFET designed for demanding switching applications. With a 75V drain-to-source voltage (Vdss) and 75A continuous drain current (Id), this through-hole TO-220AB packaged device delivers robust power handling capabilities. It features an ultra-low on-resistance (Rds(on)) of 4.5mΩ at 10V gate drive, ensuring minimal conduction losses and high efficiency. The MOSFET operates with a gate threshold voltage (Vgs(th)) of up to 4V and supports a maximum gate-source voltage (Vgs) of ±20V, making it compatible with a wide range of drive circuits.

AUIRF2907Z Features

• Low Rds(on): 4.5mΩ @ 75A, 10V reduces power dissipation and improves thermal performance.
• High Current Capability: 75A continuous current rating (at Tc=25°C) for high-power applications.
• Fast Switching: Optimized gate charge (Qg) of 270nC @ 10V ensures efficient high-frequency operation.
• Robust Construction: TO-220AB package with 300W maximum power dissipation (Tc) for reliable thermal management.
• Wide Voltage Range: 75V Vdss and ±20V Vgs(max) enhance versatility in various circuits.
• Industry-Standard Compliance: REACH unaffected, ECCN EAR99, and HTSUS 8541.29.0095 certified.

AUIRF2907Z Applications

The AUIRF2907Z is ideal for high-efficiency power conversion systems, including:

• DC-DC Converters: Low Rds(on) minimizes losses in synchronous rectification.
• Motor Drives: High current handling suits brushed/brushless motor control.
• Power Supplies: Efficient switching in SMPS and UPS designs.
• Automotive Systems: Suitable for 48V mild-hybrid and auxiliary power modules.
• Industrial Inverters: Robust performance in high-frequency PWM applications.

Conclusion of AUIRF2907Z

The AUIRF2907Z stands out for its low conduction resistance, high current capability, and reliable thermal performance, making it a preferred choice for power electronics designers. While marked as obsolete, its proven HEXFET® technology ensures dependable operation in high-power switching scenarios. Engineers seeking a balance between efficiency, durability, and cost-effectiveness will find this MOSFET well-suited for industrial, automotive, and energy conversion applications.