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AUIRF3004WL

AUIRF3004WL Description

The AUIRF3004WL from Infineon Technologies is a high-performance N-channel HEXFET® power MOSFET designed for demanding switching applications. With a 40V drain-to-source voltage (Vdss) and an impressive continuous drain current (Id) of 240A (at Tc=25°C), this device delivers robust power handling in a compact TO-262-3 (D²PAK) surface-mount package. Its ultra-low on-resistance (Rds(on)) of 1.4mΩ at 195A, 10V ensures minimal conduction losses, making it ideal for high-efficiency power conversion. Although marked as Obsolete, its legacy performance remains relevant for designs prioritizing low Rds(on) and high current capability.

AUIRF3004WL Features

• Low Rds(on): 1.4mΩ (max) at 10V gate drive, reducing power dissipation.
• High Current Capacity: 240A continuous current (Tc) and 375W max power dissipation.
• Fast Switching: Optimized gate charge (Qg=210nC @10V) and input capacitance (Ciss=9450pF @32V) for efficient high-frequency operation.
• Rugged Design: ±20V gate-source voltage (Vgs) tolerance and 4V threshold (Vgs(th)), enhancing reliability in harsh conditions.
• Compliance: ROHS3 and REACH Unaffected, with MSL 1 (Unlimited) moisture sensitivity.

AUIRF3004WL Applications

This MOSFET excels in:

• DC-DC Converters: High-current buck/boost topologies.
• Motor Drives: Brushed/brushless motor control in industrial systems.
• Power Supplies: Server, telecom, and automotive SMPS designs.
• Battery Management: High-side switches in Li-ion protection circuits.
• Inverters: Solar microinverters and UPS systems.

Conclusion of AUIRF3004WL

The AUIRF3004WL combines low conduction losses, high current density, and robust thermal performance, making it a strong candidate for legacy or cost-sensitive high-power designs. While obsolete, its HEXFET® technology and TO-262 package offer a balance of efficiency and power density, particularly in automotive and industrial applications. Engineers should verify replacement options from Infineon’s latest portfolio for future-proofing.