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AUIRF4104S

AUIRF4104S Description

The AUIRF4104S from Infineon Technologies is an N-channel HEXFET® MOSFET designed for high-efficiency power switching applications. With a 40V drain-to-source voltage (Vdss) and 75A continuous drain current (Id), it delivers robust performance in demanding environments. The device features an ultra-low on-resistance (Rds(on)) of 5.5mΩ at 10V gate drive, minimizing conduction losses. Packaged in a D2PAK (TO-263) surface-mount format, it offers excellent thermal dissipation with a 140W (Tc) power rating. Though marked as obsolete, its specifications remain competitive for legacy designs requiring high-current handling and low switching losses.

AUIRF4104S Features

• Low Rds(on): 5.5mΩ @ 75A, 10V ensures high efficiency in power conversion.
• High Current Capability: 75A continuous current (Tc) for heavy-load applications.
• Fast Switching: Optimized gate charge (Qg = 100nC @ 10V) and input capacitance (Ciss = 3000pF @ 25V) for reduced switching losses.
• Rugged Design: ±20V gate-source voltage (Vgs) tolerance enhances reliability in noisy environments.
• Thermal Efficiency: D2PAK package with high power dissipation (140W) for effective heat management.
• Compliance: ROHS3, REACH unaffected, and MSL 1 (unlimited) for environmental and handling robustness.

AUIRF4104S Applications

• DC-DC Converters: High-efficiency step-down/step-up designs in industrial power supplies.
• Motor Control: Ideal for H-bridge configurations in automotive and robotics.
• Battery Management Systems (BMS): Low Rds(on) minimizes losses in high-current discharge paths.
• UPS/Inverters: Reliable switching in backup power systems.
• Load Switches: Fast switching for high-current distribution in telecom/server PSUs.

Conclusion of AUIRF4104S

The AUIRF4104S excels in high-current, low-loss switching applications, leveraging Infineon’s HEXFET® technology for efficiency and thermal performance. While obsolete, its 5.5mΩ Rds(on), 75A rating, and robust packaging make it a viable choice for legacy or cost-sensitive designs requiring dependable power handling. Engineers should evaluate alternatives for new designs but can rely on this MOSFET for proven performance in motor drives, converters, and power distribution systems.