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AUIRF5210S

AUIRF5210S Description

The AUIRF5210S from Infineon Technologies is a high-performance P-channel HEXFET® MOSFET designed for power management applications. With a 100V drain-to-source voltage (Vdss) and 38A continuous drain current (Id), this device delivers robust performance in demanding environments. Packaged in a D2PAK (TO-263) surface-mount form factor, it offers excellent thermal dissipation, supporting 170W power dissipation (Tc) for high-efficiency operation. Though marked as obsolete, its specifications remain competitive, featuring a low on-resistance (Rds(on)) of 60mOhm at 10V gate drive, ensuring minimal conduction losses.

AUIRF5210S Features

• High Voltage & Current Handling: 100V Vdss and 38A Id (Tc) make it suitable for high-power switching.
• Low Rds(on): 60mOhm @ 10V Vgs reduces power dissipation and improves efficiency.
• Optimized Gate Charge: 230nC (Qg) @ 10V ensures fast switching with minimal gate drive losses.
• Robust Thermal Performance: 170W (Tc) power dissipation enables reliable operation under high loads.
• Wide Vgs Range: ±20V gate voltage tolerance enhances flexibility in drive circuitry.
• Compliance: ROHS3 compliant and REACH unaffected, meeting environmental standards.

AUIRF5210S Applications

• Power Supplies: Efficient DC-DC converters and SMPS designs benefit from its low Rds(on) and high current capability.
• Motor Control: Ideal for H-bridge configurations in industrial and automotive motor drives.
• Battery Management: Used in discharge protection circuits and load switches due to its P-channel architecture.
• Automotive Systems: Suitable for 12V/24V power distribution, LED drivers, and infotainment systems.
• Industrial Switching: High reliability makes it a fit for solenoids, relays, and high-side switches.

Conclusion of AUIRF5210S

The AUIRF5210S is a high-efficiency P-channel MOSFET offering a balance of low conduction losses, fast switching, and thermal robustness. While obsolete, its D2PAK packaging, 100V rating, and 38A current capacity make it a viable choice for legacy designs or replacements in power conversion, motor control, and automotive applications. Engineers seeking a reliable, high-performance MOSFET with proven Infineon HEXFET® technology may still find value in this model.