Infineon Technologies
AUIRF540ZSTRL  
Single FETs, MOSFETs

AUIRF540ZSTRL
278-AUIRF540ZSTRL
Ersa
Infineon Technologies-AUIRF540ZSTRL-datasheets-7572548.pdf
MOSFET N-CH 100V 36A D2PAK
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AUIRF540ZSTRL Description

AUIRF540ZSTRL Description

The AUIRF540ZSTRL from Infineon Technologies is an N-channel HEXFET® MOSFET designed for high-efficiency power switching applications. With a 100V drain-to-source voltage (Vdss) and 36A continuous drain current (Id), this device delivers robust performance in demanding environments. Its low on-resistance (Rds(on)) of 26.5mΩ @ 10V, 22A minimizes conduction losses, while the high gate charge (Qg) of 63nC @ 10V ensures fast switching capabilities. Packaged in a D2PAK (TO-263) surface-mount format and supplied in Tape & Reel (TR), it is optimized for automated assembly. Though marked Obsolete, it remains a reliable choice for legacy designs requiring high-current handling and thermal efficiency.

AUIRF540ZSTRL Features

  • Low Rds(on): 26.5mΩ @ 10V, reducing power dissipation and improving efficiency.
  • High Current Capacity: 36A continuous drain current (Tc) for heavy-load applications.
  • Fast Switching: Gate charge (Qg) of 63nC @ 10V enables rapid turn-on/off transitions.
  • Robust Voltage Handling: 100V Vdss and ±20V Vgs(max) tolerance for versatile use.
  • Thermal Performance: 92W power dissipation (Tc) ensures reliability under high thermal stress.
  • Compliance: ROHS3 and REACH unaffected, with MSL 1 (unlimited) shelf life.

AUIRF540ZSTRL Applications

Ideal for DC-DC converters, motor drives, and power supplies, the AUIRF540ZSTRL excels in:

  • Switching Regulators: Low Rds(on) minimizes losses in high-frequency designs.
  • Automotive Systems: 100V rating suits 12/24V battery management and load switching.
  • Industrial Power Stages: High current handling supports inverters and H-bridge circuits.
  • Energy-Efficient Designs: HEXFET® technology balances performance with thermal management.

Conclusion of AUIRF540ZSTRL

The AUIRF540ZSTRL offers a compelling blend of low resistance, high current capability, and fast switching, making it suitable for power-intensive applications. While obsolete, its D2PAK packaging and Infineon’s HEXFET® reliability ensure continued utility in legacy or cost-sensitive projects. Engineers should evaluate alternatives for new designs but can rely on this MOSFET for proven performance in existing systems.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
HTS
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Typical Fall Time (ns)
Process Technology
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
SVHC Exceeds Threshold
Material
Package Length
Supplier Temperature Grade
Typical Gate Charge @ 10V (nC)
Standard Package Name
Pin Count
Mounting
Tab
Lead Shape
Part Status
SVHC
Package Width
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)

AUIRF540ZSTRL Documents

Download datasheets and manufacturer documentation for AUIRF540ZSTRL

Ersa AUIRF540Z(S)      
Ersa Package Drawing Update 19/Aug/2015      
Ersa Part Number Guide      
Ersa AUIRF540Z(S)      
Ersa Mult Dev Label Chgs 8/Sep/2021      

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