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AUIRF7669L2TR

AUIRF7669L2TR Description

The AUIRF7669L2TR from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power management applications. With a 100V drain-to-source voltage (Vdss) and continuous drain current (Id) of 19A (Ta) / 114A (Tc), this device delivers robust power handling in a compact DirectFET™ Isometric L8 package. Its ultra-low on-resistance (Rds(on)) of 4.4mΩ at 10V gate drive ensures minimal conduction losses, making it ideal for high-efficiency designs. The MOSFET leverages HEXFET® technology, providing superior thermal performance and reliability.

AUIRF7669L2TR Features

• Low Rds(on): 4.4mΩ @ 68A, 10V for reduced power dissipation.
• High Current Capability: Supports up to 114A (Tc) with excellent thermal performance.
• Optimized Switching: Low gate charge (Qg) of 120nC @ 10V and input capacitance (Ciss) of 5660pF @ 25V for fast switching.
• Robust Construction: DirectFET™ package enhances thermal dissipation and power density.
• Wide Vgs Range: ±20V gate-source voltage tolerance for flexible drive requirements.
• Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term durability.

AUIRF7669L2TR Applications

This MOSFET excels in high-power applications requiring efficiency and thermal stability, including:

• DC-DC Converters: Optimized for synchronous buck/boost topologies.
• Motor Drives: High current handling for industrial and automotive systems.
• Power Supplies: Server, telecom, and computing PSUs.
• Battery Management: Efficient power switching in energy storage systems.
• Automotive Systems: Suitable for 48V mild-hybrid and electric vehicle subsystems.

Conclusion of AUIRF7669L2TR

The AUIRF7669L2TR stands out for its low Rds(on), high current capability, and advanced DirectFET™ packaging, making it a top choice for high-efficiency power designs. Its fast switching, thermal performance, and reliability ensure optimal operation in demanding environments like automotive, industrial, and computing applications. Engineers seeking a high-performance, space-saving MOSFET will find this device an excellent solution.