Infineon Technologies_AUIRF8736M2TR
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Infineon Technologies
AUIRF8736M2TR

278-AUIRF8736M2TR
PDF Datasheet
MOSFET N-CH 40V 27A DIRECTFET
12 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
6867 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
204 nC @ 10 V
Product Status
Active
Supplier Device Package
DirectFET™ Isometric M4
Drain to Source Voltage (Vdss)
40 V
Power Dissipation (Max)
2.5W (Ta), 63W (Tc)
Package / Case
DirectFET™ Isometric M4
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AUIRF8736M2TR Description

AUIRF8736M2TR Description

The AUIRF8736M2TR from Infineon Technologies is a high-performance N-channel MOSFET designed for power management applications requiring low on-resistance and high current handling. Built using HEXFET® technology, it offers a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 27A (Ta) or 137A (Tc), making it suitable for high-efficiency switching. The device features an ultra-low Rds(on) of 1.9mΩ at 85A, 10V, minimizing conduction losses. Packaged in a DirectFET™ Isometric M4 surface-mount form factor, it provides superior thermal performance and power dissipation capabilities (63W at Tc), ideal for space-constrained designs.

AUIRF8736M2TR Features

  • Low On-Resistance: 1.9mΩ @ 10V gate drive ensures minimal power loss.
  • High Current Capability: Supports up to 137A (Tc) for demanding applications.
  • Efficient Thermal Management: DirectFET™ packaging enhances heat dissipation (2.5W Ta, 63W Tc).
  • Fast Switching: Low gate charge (Qg = 204nC @ 10V) and input capacitance (Ciss = 6867pF @ 25V) improve switching efficiency.
  • Robust Design: ±20V gate-source voltage (Vgs) tolerance and RoHS3/REACH compliance.
  • Space-Saving: Surface-mount M4 package optimizes PCB real estate.

AUIRF8736M2TR Applications

This MOSFET excels in high-current, high-efficiency applications such as:

  • DC-DC Converters: Synchronous buck/boost topologies in server/telecom power supplies.
  • Motor Drives: H-bridge configurations for industrial and automotive systems.
  • Battery Management: Load switching and protection in Li-ion/power tool batteries.
  • POL (Point-of-Load) Regulators: High-density VRMs for CPUs/GPUs.

Conclusion of AUIRF8736M2TR

The AUIRF8736M2TR combines Infineon’s HEXFET® technology with advanced packaging to deliver superior power efficiency, thermal performance, and reliability. Its low Rds(on), high current rating, and compact DirectFET™ M4 package make it an optimal choice for modern power electronics requiring high power density and thermal management. Ideal for industrial, automotive, and computing applications, this MOSFET sets a benchmark for performance in its class.

FAQ

Are there related or alternative parts for AUIRF8736M2TR?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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