Infineon Technologies_AUIRF8739L2TR
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Infineon Technologies
AUIRF8739L2TR

278-AUIRF8739L2TR
PDF Datasheet
MOSFET N-CH 40V 57A DIRECTFET
12 Weeks

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Tech Specifications

Configuration
Single Dual Drain Octal Source
Typical Turn-Off Delay Time (ns)
120
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
17890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
562 nC @ 10 V
Typical Rise Time (ns)
117
PPAP
Unknown
Channel Mode
Enhancement
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AUIRF8739L2TR Description

AUIRF8739L2TR Description

The AUIRF8739L2TR from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power management applications. Built using advanced HEXFET® technology, it offers an ultra-low on-resistance (Rds(on)) of just 0.6mΩ at 195A and 10V, ensuring minimal conduction losses. With a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 57A (Ta) or 545A (Tc), this MOSFET is optimized for high-current switching. Packaged in the innovative DirectFET™ Isometric L8, it provides superior thermal performance and power dissipation capabilities (340W at Tc), making it ideal for space-constrained, high-power designs.

AUIRF8739L2TR Features

  • Ultra-Low Rds(on): 0.6mΩ @ 195A, 10V for high efficiency.
  • High Current Handling: Supports up to 545A (Tc) with robust thermal performance.
  • DirectFET™ Packaging: Enhances heat dissipation and reduces PCB footprint.
  • Fast Switching: Low gate charge (Qg) of 562nC @ 10V and input capacitance (Ciss) of 17,890pF @ 25V for reduced switching losses.
  • Wide Drive Voltage Range: Optimized for 10V gate drive, ensuring reliable operation.
  • RoHS3 & REACH Compliant: Environmentally friendly and suitable for modern electronics.

AUIRF8739L2TR Applications

This MOSFET excels in high-efficiency power conversion systems, including:

  • DC-DC Converters: For telecom, server, and industrial power supplies.
  • Motor Drives & Inverters: High-current switching in automotive and robotics.
  • Battery Management Systems (BMS): Efficient power distribution in EVs and energy storage.
  • Synchronous Rectification: Minimizes losses in high-frequency SMPS designs.
    Its low Rds(on) and superior thermal performance make it particularly suitable for 48V mild-hybrid vehicles and high-density power modules.

Conclusion of AUIRF8739L2TR

The AUIRF8739L2TR stands out as a high-efficiency, high-power MOSFET with industry-leading thermal and electrical performance. Its DirectFET™ packaging and ultra-low resistance make it ideal for modern power electronics requiring high current density, minimal losses, and compact footprints. Whether in automotive, industrial, or computing applications, this MOSFET delivers reliability and efficiency, backed by Infineon’s proven HEXFET® technology.

FAQ

What is the mounting type of AUIRF8739L2TR?
AUIRF8739L2TR uses a Surface Mount mounting style based on the listed product specifications.
What operating temperature range does AUIRF8739L2TR support?
What package or case is AUIRF8739L2TR available in?
What is AUIRF8739L2TR?
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