Infineon Technologies_AUIRFB8409
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Infineon Technologies
AUIRFB8409

278-AUIRFB8409
PDF Datasheet
MOSFET N-CH 40V 195A TO220AB
12 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
160
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
14240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
450 nC @ 10 V
Typical Rise Time (ns)
105
PPAP
Unknown
Channel Mode
Enhancement
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AUIRFB8409 Description

AUIRFB8409 Description

The AUIRFB8409 from Infineon Technologies is a high-performance N-channel HEXFET® MOSFET designed for demanding power management applications. With a 40V drain-to-source voltage (Vdss) and an impressive continuous drain current (Id) of 195A (at Tc = 25°C), this device excels in high-current, low-voltage switching scenarios. Its ultra-low on-resistance (Rds(on)) of just 1.3mΩ at 100A, 10V ensures minimal conduction losses, enhancing efficiency in power systems. Packaged in a robust TO-220AB through-hole format, the AUIRFB8409 is optimized for thermal performance, supporting a maximum power dissipation of 375W (Tc).

AUIRFB8409 Features

  • Low Rds(on): 1.3mΩ @ 100A, 10V reduces power losses and improves thermal management.
  • High Current Handling: 195A continuous drain current (Id) for heavy-load applications.
  • Fast Switching: Low gate charge (Qg) of 450nC @ 10V and input capacitance (Ciss) of 14,240pF @ 25V enable efficient high-frequency operation.
  • Robust Design: ±20V gate-source voltage (Vgs) tolerance and 3.9V threshold (Vgs(th)) ensure reliable switching under varying conditions.
  • Compliance: ROHS3 and REACH compliant, with MSL 1 (unlimited) moisture sensitivity for extended shelf life.

AUIRFB8409 Applications

Ideal for high-efficiency DC-DC converters, motor drives, and synchronous rectification in industrial and automotive systems, the AUIRFB8409 is particularly suited for:

  • Switched-mode power supplies (SMPS) requiring low conduction losses.
  • Battery management systems (BMS) in electric vehicles (EVs) due to its high current capability.
  • Uninterruptible power supplies (UPS) and inverters where low Rds(on) minimizes heat generation.
  • High-current load switches in robotics and automation.

Conclusion of AUIRFB8409

The AUIRFB8409 stands out as a superior choice for engineers seeking a high-current, low-resistance MOSFET with robust thermal performance. Its combination of low gate charge, ultra-low Rds(on), and high power dissipation makes it ideal for efficiency-critical applications in automotive, industrial, and power electronics. Infineon’s HEXFET® technology ensures reliability, while the TO-220AB package simplifies integration into existing designs. For systems demanding high efficiency, durability, and thermal stability, the AUIRFB8409 delivers unmatched performance.

FAQ

What operating temperature range does AUIRFB8409 support?
AUIRFB8409 has an operating temperature range of -55°C ~ 175°C (TJ).
Is AUIRFB8409 currently in stock?
What is the mounting type of AUIRFB8409?
Are there related or alternative parts for AUIRFB8409?
What voltage specification is listed for AUIRFB8409?
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