Infineon Technologies_BAR6303WE6327HTSA1
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Infineon Technologies
BAR6303WE6327HTSA1

284-BAR6303WE6327HTSA1
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RF DIODE PIN 50V 250MW SOD323-2
4 Weeks

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Tech Specifications

Voltage - Peak Reverse (Max)
50V
Configuration
Single
Diode Type
PIN - Single
Current - Max
100 mA
PPAP
Unknown
Maximum Reverse Leakage Current (uA)
0.01
Product Status
Active
Resistance @ If, F
1Ohm @ 10mA, 100MHz
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BAR6303WE6327HTSA1 Description

BAR6303WE6327HTSA1 Description

The BAR6303WE6327HTSA1 from Infineon Technologies is a high-performance PIN diode designed for RF applications, offering exceptional linearity and low distortion. With a peak reverse voltage of 50V and a maximum current rating of 100 mA, this diode is optimized for high-frequency signal control in demanding environments. Its ultra-low capacitance of 0.3pF @ 5V, 1MHz and low resistance of 1Ω @ 10mA, 100MHz ensure minimal signal loss, making it ideal for precision RF switching and attenuation. Packaged in a compact SOD-323-2 form factor with tape & reel (TR), it is suitable for automated assembly processes.

BAR6303WE6327HTSA1 Features

  • Low Capacitance & Resistance: Ensures high-speed switching and minimal insertion loss in RF circuits.
  • High Power Handling: Supports 250 mW power dissipation and operates up to 150°C junction temperature (TJ).
  • Robust Construction: Compliant with ROHS3 and REACH Unaffected, ensuring environmental and regulatory compliance.
  • Broad Operating Range: Suitable for DC to microwave frequencies, excelling in high-frequency applications.
  • Reliable Packaging: MSL 1 (Unlimited) moisture sensitivity allows for extended storage without degradation.

BAR6303WE6327HTSA1 Applications

This diode is particularly suited for:

  • RF Switches & Attenuators: Provides low distortion and high isolation in communication systems.
  • Wireless Infrastructure: Enhances performance in 5G, LTE, and Wi-Fi front-end modules.
  • Test & Measurement Equipment: Delivers precision signal control in RF analyzers and signal generators.
  • Defense & Aerospace: Used in radar and satellite systems due to its high reliability and thermal stability.

Conclusion of BAR6303WE6327HTSA1

The BAR6303WE6327HTSA1 stands out as a superior PIN diode for RF applications, combining low parasitic parameters, high power tolerance, and industry-leading packaging. Its versatility in high-frequency signal routing and robust thermal performance makes it a preferred choice for engineers designing next-generation wireless and test systems. With Infineon's proven quality and compliance with global standards, this diode ensures long-term reliability in even the most demanding RF environments.

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BAR6303WE6327HTSA1 is a RF Diodes from Infineon Technologies. This product page provides its main specifications, pricing information, availability, and inquiry options.
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