Infineon Technologies_BAR6404E6327HTSA1
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Infineon Technologies
BAR6404E6327HTSA1

284-BAR6404E6327HTSA1
PDF Datasheet
RF DIODE PIN 150V 250MW SOT23-3
4 Weeks

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Tech Specifications

Voltage - Peak Reverse (Max)
150V
Configuration
Dual Series
PCB changed
3
Diode Type
PIN - 1 Pair Series Connection
HTS
COMPONENTS
ECCN (US)
EAR99
Current - Max
100 mA
PPAP
Unknown
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BAR6404E6327HTSA1 Description

BAR6404E6327HTSA1 Description

The BAR6404E6327HTSA1 is a high-performance RF diode from Infineon Technologies, designed for applications requiring robust performance in challenging environments. This device features an operating temperature range of 150°C (TJ), making it suitable for high-temperature applications. With a capacitance of 0.35pF @ 20V, 1MHz, and a peak reverse voltage of 150V, the BAR6404E6327HTSA1 offers excellent performance in high-frequency applications. The device is designed to handle a maximum current of 100 mA and dissipate up to 250 mW of power, ensuring reliable operation in demanding conditions.

BAR6404E6327HTSA1 Features

  • Operating Temperature: 150°C (TJ) for high-temperature applications
  • Capacitance: 0.35pF @ 20V, 1MHz for high-frequency performance
  • Peak Reverse Voltage: 150V for reliable operation in demanding conditions
  • Maximum Current: 100 mA for efficient power handling
  • Power Dissipation: 250 mW for reliable operation in high-power applications
  • Resistance: 1.35Ohm @ 100mA, 100MHz for low-loss performance
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) for enhanced reliability in humid environments
  • RoHS Compliance: ROHS3 Compliant for environmentally friendly applications
  • REACH Status: REACH Unaffected for compliance with European regulations
  • Package: Tape & Reel (TR) for easy integration into automated assembly processes

BAR6404E6327HTSA1 Applications

The BAR6404E6327HTSA1 is ideal for a wide range of applications where high performance and reliability are critical. Some specific use cases include:

  1. RF Power Amplifiers: The high peak reverse voltage and power dissipation capabilities make it suitable for use in RF power amplifiers, where high voltages and power levels are common.
  2. Communication Systems: The low capacitance and resistance at high frequencies make it an excellent choice for communication systems, where signal integrity is crucial.
  3. Automotive Applications: The high operating temperature and moisture sensitivity level make it suitable for use in automotive applications, where components are exposed to harsh environmental conditions.
  4. Industrial Electronics: The robust performance and reliability of the BAR6404E6327HTSA1 make it an ideal choice for industrial electronics, where components must withstand high temperatures and demanding operating conditions.

Conclusion of BAR6404E6327HTSA1

The BAR6404E6327HTSA1 from Infineon Technologies is a high-performance RF diode designed for demanding applications. Its unique combination of high operating temperature, low capacitance, and high peak reverse voltage make it an excellent choice for a wide range of applications, including RF power amplifiers, communication systems, automotive electronics, and industrial electronics. With its RoHS compliance and REACH unaffected status, the BAR6404E6327HTSA1 is also an environmentally friendly option for designers looking to meet strict regulatory requirements.

FAQ

What is the standard lead time for BAR6404E6327HTSA1?
The standard lead time for BAR6404E6327HTSA1 is 4 Weeks.
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What is BAR6404E6327HTSA1?
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