Infineon Technologies Tariff Inquiry

BAR66E6327HTSA1

BAR66E6327HTSA1 Description

The BAR66E6327HTSA1 is a high-performance RF diode offered by Infineon Technologies, designed for applications requiring robust performance and reliability. With a capacitance of 0.6pF at 35V and 1MHz, it ensures minimal signal distortion and high-speed switching. The device can handle a peak reverse voltage of 150V and a maximum current of 200mA, making it suitable for high-voltage environments. Its power dissipation capacity of 250mW ensures efficient operation in demanding conditions.

BAR66E6327HTSA1 Features

• Capacitance @ Vr, F: 0.6pF @ 35V, 1MHz
• Voltage - Peak Reverse (Max): 150V
• ECCN: EAR99
• Current - Max: 200 mA
• Product Status: Active
• Resistance @ If, F: 1.8Ohm @ 5mA, 100MHz
• Power Dissipation (Max): 250 mW
• REACH Status: REACH Unaffected
• Package: Tape & Reel (TR)
• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

BAR66E6327HTSA1 Applications

The BAR66E6327HTSA1 is ideal for a variety of applications due to its high-voltage handling and low capacitance. It is particularly suited for:

• RF and microwave circuits where high-voltage stability and low distortion are crucial.
• Communication systems requiring high-speed signal switching and minimal signal loss.
• Automotive electronics for high-voltage protection and reliable performance in harsh environments.

Conclusion of BAR66E6327HTSA1

The BAR66E6327HTSA1 stands out for its ability to operate under high-voltage conditions with low capacitance, making it a superior choice for applications demanding high reliability and performance. Its compliance with RoHS3 and REACH regulations, along with its unlimited moisture sensitivity level, further enhance its appeal in the electronics industry. This diode's unique combination of technical specifications and performance benefits positions it as a leading solution in high-voltage RF applications.