Infineon Technologies_BAR9002ELE6327XTMA1
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Infineon Technologies
BAR9002ELE6327XTMA1

284-BAR9002ELE6327XTMA1
PDF Datasheet
RF DIODE PIN 80V 250MW TSLP-2-19
13 Weeks

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Tech Specifications

Frequency Range
UHF
Voltage - Peak Reverse (Max)
80V
Configuration
Single
PCB changed
2
Diode Type
PIN - Single
HTS
8541.29.00.95
ECCN (US)
EAR99
Current - Max
100 mA
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BAR9002ELE6327XTMA1 Description

BAR9002ELE6327XTMA1 Description

The BAR9002ELE6327XTMA1 is an RF diode manufactured by Infineon Technologies, designed for high-performance applications. This device operates within a temperature range of 150°C (TJ), making it suitable for various demanding environments. It features a capacitance of 0.35pF @ 1V, 1MHz, and can handle a peak reverse voltage of up to 80V. With a maximum current of 100 mA and power dissipation of 250 mW, this diode is ideal for applications requiring high reliability and performance.

BAR9002ELE6327XTMA1 Features

  • Operating Temperature: 150°C (TJ)
  • Capacitance: 0.35pF @ 1V, 1MHz
  • Voltage - Peak Reverse (Max): 80V
  • Current - Max: 100 mA
  • Power Dissipation (Max): 250 mW
  • Package / Case: 0402 (1006 Metric)
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • ECCN: EAR99
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • HTSUS: 8541.10.0070
  • Package: Tape & Reel (TR)

BAR9002ELE6327XTMA1 Applications

The BAR9002ELE6327XTMA1 is an excellent choice for various RF applications, including:

  1. RF Power Amplifiers: Its high peak reverse voltage and low capacitance make it ideal for use in power amplifiers, ensuring efficient signal transmission and minimal signal loss.
  2. RF Switching Applications: The low resistance and high current handling capability make it suitable for RF switching applications, providing reliable performance in high-frequency environments.
  3. Communication Systems: Its compact 0402 package and high operating temperature make it suitable for use in communication systems, where space and reliability are critical.

Conclusion of BAR9002ELE6327XTMA1

The BAR9002ELE6327XTMA1 from Infineon Technologies is a high-performance RF diode designed for demanding applications. Its unique combination of high peak reverse voltage, low capacitance, and compact package size make it an ideal choice for RF power amplifiers, switching applications, and communication systems. With its REACH unaffected status and RoHS3 compliance, this diode is not only reliable but also environmentally friendly. Choose the BAR9002ELE6327XTMA1 for your next high-performance RF application.

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Yes. BAR9002ELE6327XTMA1 currently shows 21945 unit(s) in stock.
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