The BAS16 from Infineon Technologies is a general-purpose silicon switching diode designed for high-speed, low-power applications. With a maximum reverse voltage (Vr) of 85V and an average rectified current (Io) of 200mA, it is optimized for small-signal and fast-switching circuits. The diode features a low forward voltage drop (1.25V @ 150mA) and minimal reverse leakage current (1µA @ 75V), ensuring efficient performance in precision applications. Its ultra-fast reverse recovery time (6ns) and low junction capacitance (2pF @ 0V, 1MHz) make it ideal for high-frequency signal processing. Packaged in SOT23-3, it is suitable for surface-mount (SMD) designs, though it is now classified as obsolete by the manufacturer.
The BAS16 excels in:
The BAS16 is a high-performance, general-purpose diode offering speed, efficiency, and reliability in compact SMD form. While now obsolete, its fast switching, low leakage, and minimal capacitance make it a legacy choice for RF, digital, and precision analog designs. Engineers seeking alternatives should consider modern equivalents with similar specs but updated availability.
Download datasheets and manufacturer documentation for BAS16