Infineon Technologies_BAS70E6327HTSA1

Infineon Technologies
BAS70E6327HTSA1  
Single Diodes

BAS70E6327HTSA1
280-BAS70E6327HTSA1
Ersa
Infineon Technologies-BAS70E6327HTSA1-datasheets-7184553.pdf
DIODE SCHOTTKY 70V 70MA SOT23
In Stock : 26179

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BAS70E6327HTSA1 Description

BAS70E6327HTSA1 Description

The BAS70E6327HTSA1 from Infineon Technologies is a high-performance Schottky diode designed for small-signal applications requiring fast switching and low power loss. With a maximum reverse voltage (Vr) of 70V and an average rectified current (Io) of 70mA, this diode is optimized for efficiency in compact circuits. Its ultra-low reverse recovery time (trr) of 100 ps minimizes switching losses, making it ideal for high-frequency applications. The device features a low forward voltage drop (1V @ 15mA) and minimal reverse leakage (100nA @ 50V), ensuring energy efficiency. Packaged in a surface-mount SOT23 form factor, it is suitable for space-constrained designs while complying with RoHS3 and REACH standards.

BAS70E6327HTSA1 Features

  • High-Speed Switching: 100 ps reverse recovery time for rapid response in RF and digital circuits.
  • Low Power Dissipation: Forward voltage of 1V (max) reduces energy loss.
  • Minimal Leakage: Only 100nA reverse leakage at 50V enhances efficiency.
  • Low Capacitance: 2pF @ 0V, 1MHz minimizes signal distortion in high-frequency applications.
  • Robust Packaging: SOT23 tape-and-reel packaging ensures easy assembly and handling.
  • Compliance: Meets RoHS3, REACH, and EAR99 regulations for global use.

BAS70E6327HTSA1 Applications

This Schottky diode excels in:

  • High-Frequency Rectification: RF detectors, mixers, and signal demodulation.
  • Signal Clamping & Protection: Prevents voltage spikes in data lines and communication circuits.
  • Power Management: Low-drop rectification in portable devices and battery-powered systems.
  • Switching Circuits: Fast recovery suits PWM controllers and DC-DC converters.
  • Sensitive Analog Systems: Low noise and leakage make it ideal for precision instrumentation.

Conclusion of BAS70E6327HTSA1

The BAS70E6327HTSA1 stands out for its blend of speed, efficiency, and compact design, outperforming standard diodes in high-frequency and low-power scenarios. Its Schottky technology ensures minimal losses, while the SOT23 package caters to modern miniaturized electronics. Whether for RF, power management, or signal integrity, this diode delivers reliability and performance, backed by Infineon’s quality assurance.

Tech Specifications

Configuration
PPAP
Product Status
Automotive
Supplier Package
Package / Case
Peak Forward Voltage (V)
Technology
REACH Status
Voltage - DC Reverse (Vr) (Max)
Peak Non-Repetitive Surge Current (A)
EU RoHS
Maximum Continuous Forward Current (A)
Current - Average Rectified (Io)
Operating Temperature - Junction
Moisture Sensitivity Level (MSL)
Capacitance @ Vr, F
ECCN
Supplier Temperature Grade
Mounting Type
Standard Package Name
Current - Reverse Leakage @ Vr
Pin Count
Mounting
Lead Shape
HTSUS
Package
Reverse Recovery Time (trr)
PCB changed
HTS
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum DC Reverse Voltage (V)
Speed
Peak Reverse Current (uA)
Material
Package Length
Maximum Diode Capacitance (pF)
Series
Type
Voltage - Forward (Vf) (Max) @ If
Part Status
Package Width
Base Product Number
Mounting Style
Unit Weight
Vrrm - Repetitive Reverse Voltage
Product
Ir - Reverse Current
RoHS
Minimum Operating Temperature
Qualification
Vf - Forward Voltage
Ifsm - Forward Surge Current
Vr - Reverse Voltage
Maximum Operating Temperature
If - Forward Current
Pd - Power Dissipation
USHTS

BAS70E6327HTSA1 Documents

Download datasheets and manufacturer documentation for BAS70E6327HTSA1

Ersa BAS70, BAS170W      
Ersa Part Number Guide      
Ersa BAS70, BAS170W      
Ersa RoHS Certificate      

Shopping Guide

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