The BAS70E6327HTSA1 from Infineon Technologies is a high-performance Schottky diode designed for small-signal applications requiring fast switching and low power loss. With a maximum reverse voltage (Vr) of 70V and an average rectified current (Io) of 70mA, this diode is optimized for efficiency in compact circuits. Its ultra-low reverse recovery time (trr) of 100 ps minimizes switching losses, making it ideal for high-frequency applications. The device features a low forward voltage drop (1V @ 15mA) and minimal reverse leakage (100nA @ 50V), ensuring energy efficiency. Packaged in a surface-mount SOT23 form factor, it is suitable for space-constrained designs while complying with RoHS3 and REACH standards.
This Schottky diode excels in:
The BAS70E6327HTSA1 stands out for its blend of speed, efficiency, and compact design, outperforming standard diodes in high-frequency and low-power scenarios. Its Schottky technology ensures minimal losses, while the SOT23 package caters to modern miniaturized electronics. Whether for RF, power management, or signal integrity, this diode delivers reliability and performance, backed by Infineon’s quality assurance.
Download datasheets and manufacturer documentation for BAS70E6327HTSA1