Infineon Technologies
BCP 56-10 E6327
283-BCP 56-10 E6327
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
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Tech Specifications
Min Operating Temperature
-65 °C
Collector Emitter Saturation Voltage
500 mV
Mount
Surface Mount
Current Rating
1 A
Collector Emitter Voltage (VCEO)
80 V
Gain Bandwidth Product
100 MHz
RoHS
Compliant
Transition Frequency
100 MHz
BCP 56-10 E6327 Description
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
FAQ
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