Infineon Technologies_BCR562E6327HTSA1
original

Infineon Technologies
BCR562E6327HTSA1

292-BCR562E6327HTSA1
PDF Datasheet
TRANS PREBIAS PNP 50V SOT23
4 weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Configuration
Single
PPAP
Unknown
Product Status
Last Time Buy
Voltage - Collector Emitter Breakdown (Max)
50 V
Automotive
Yes
Typical Resistor Ratio
1
Supplier Package
SOT-23
Transistor Type
PNP - Pre-Biased
Show More

BCR562E6327HTSA1 Description

BCR562E6327HTSA1 Description

The BCR562E6327HTSA1 is a high-performance, single, pre-biased PNP bipolar transistor from Infineon Technologies. It is designed for applications requiring high frequency, low power, and low noise performance. The device is offered in a compact SOT23 package, making it suitable for space-constrained designs. With a maximum frequency transition of 150 MHz, the BCR562E6327HTSA1 is ideal for use in various high-speed communication and signal processing applications.

BCR562E6327HTSA1 Features

  • 150 MHz maximum frequency transition for high-speed operation
  • 500 mA maximum collector current for efficient power handling
  • 4.7 kOhms base and emitter-base resistors for stable biasing
  • 300 mV maximum Vce saturation at 2.5 mA and 50 mA collector current
  • 50 V maximum collector-emitter breakdown voltage for robust operation
  • 330 mW maximum power dissipation for reliable performance
  • 60 minimum DC current gain (hFE) at 50 mA collector current and 5V collector-emitter voltage
  • Surface-mount packaging for compact and efficient PCB layout
  • REACH unaffected and RoHS3 compliant for environmental responsibility
  • Moisture sensitivity level 1 for unlimited storage time before reflow soldering

BCR562E6327HTSA1 Applications

The BCR562E6327HTSA1 is an excellent choice for a wide range of applications, including:

  1. High-speed communication systems, such as cellular base stations and satellite communication equipment
  2. Signal processing and amplification in audio and video equipment
  3. Power management and control in consumer electronics and industrial automation systems
  4. RF and IF amplification in wireless communication devices
  5. Motor control and switching in automotive and robotics applications

Conclusion of BCR562E6327HTSA1

The BCR562E6327HTSA1 from Infineon Technologies is a versatile and high-performance pre-biased PNP bipolar transistor. Its unique combination of high frequency, low power, and low noise performance makes it an ideal choice for a wide range of applications in the electronics industry. With its compact SOT23 package, the BCR562E6327HTSA1 is suitable for space-constrained designs, while its robust electrical characteristics ensure reliable operation in demanding environments.

FAQ

What voltage specification is listed for BCR562E6327HTSA1?
The listed voltage-related specification for BCR562E6327HTSA1 is 50 V.
What package or case is BCR562E6327HTSA1 available in?
What operating temperature range does BCR562E6327HTSA1 support?
Are there related or alternative parts for BCR562E6327HTSA1?
What is the mounting type of BCR562E6327HTSA1?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ