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Infineon Technologies
BDP 949 E6327
283-BDP 949 E6327
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
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Tech Specifications
Min Operating Temperature
-65 °C
Mount
Surface Mount
Gain Bandwidth Product
100 MHz
RoHS
Compliant
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Number of Pins
4
Polarity
NPN
BDP 949 E6327 Description
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
FAQ
What voltage specification is listed for BDP 949 E6327?
The listed voltage-related specification for BDP 949 E6327 is 5 V.
What package or case is BDP 949 E6327 available in?
What is the mounting type of BDP 949 E6327?
Is BDP 949 E6327 currently in stock?
What is BDP 949 E6327?
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