Infineon Technologies

BFP420H6327XTSA1  

Bipolar RF Transistors

BFP420H6327XTSA1 Description

The BFP420H6327XTSA1 is a high-performance NPN bipolar RF transistor designed and manufactured by Infineon Technologies. This device is specifically engineered to deliver exceptional performance in a wide range of applications, including wireless communication systems, radar systems, and high-frequency amplifiers. With its advanced design, the BFP420H6327XTSA1 offers a unique combination of high-frequency capabilities, power handling, and noise performance.

BFP420H6327XTSA1 Features

• Operating Temperature: The BFP420H6327XTSA1 can operate at a maximum junction temperature of 150°C, making it suitable for high-temperature environments.
• Frequency - Transition: This device boasts an impressive transition frequency of 25 GHz, ensuring excellent performance in high-frequency applications.
• Current - Collector (Ic) (Max): The maximum collector current is 35 mA, providing ample current handling capabilities.
• Voltage - Collector Emitter Breakdown (Max): The BFP420H6327XTSA1 can withstand a maximum collector-emitter breakdown voltage of 5V, ensuring reliable operation in various circuits.
• Power - Max: This transistor can handle a maximum power of 160 mW, making it suitable for power-sensitive applications.
• Noise Figure: The typical noise figure at 1.8 GHz is 1.1 dB, which is significantly lower than many other devices in its class, ensuring superior signal integrity.
• DC Current Gain (hFE) (Min) @ Ic, Vce: With a minimum current gain of 60 at 20 mA and 4V, the BFP420H6327XTSA1 offers consistent performance across a wide range of operating conditions.
• Mounting Type: The device is surface mount, which allows for compact and efficient integration into various electronic systems.
• RoHS Status: The BFP420H6327XTSA1 is compliant with the RoHS3 directive, making it an environmentally friendly choice.

BFP420H6327XTSA1 Applications

The BFP420H6327XTSA1 is ideal for a variety of applications where high-frequency performance and low noise are critical. Some specific use cases include:

• Wireless Communication Systems: Due to its high transition frequency and low noise figure, the BFP420H6327XTSA1 is well-suited for use in wireless communication systems, such as mobile phones and base stations.
• Radar Systems: The device's high-frequency capabilities make it an excellent choice for radar systems, where high-speed signal processing is required.
• High-Frequency Amplifiers: The BFP420H6327XTSA1's high gain and power handling capabilities make it ideal for use in high-frequency amplifiers, where signal amplification and low distortion are crucial.

Conclusion of BFP420H6327XTSA1

In conclusion, the BFP420H6327XTSA1 from Infineon Technologies is a high-performance NPN bipolar RF transistor that offers a unique combination of high-frequency performance, low noise, and power handling capabilities. Its advanced features make it an ideal choice for a wide range of applications, including wireless communication systems, radar systems, and high-frequency amplifiers. With its RoHS3 compliance and surface mount design, the BFP420H6327XTSA1 is not only a powerful device but also an environmentally friendly and space-efficient solution for your high-frequency electronic needs.

BFP420H6327XTSA1 Documents

Download datasheets and manufacturer documentation for BFP420H6327XTSA1

Datasheets :

BFP420      

PCN Packaging :

Reel Cover Tape Chg 16/Feb/2016       Recyclable Glass Carrier 14/Oct/2014      

Other Related Documents :

Part Number Guide      

Simulation Models :

Infineon-RFTransistor-AWR_MWO_Design_Kit-SM-v02_10-EN Spice Model      

Environmental Information :

RoHS Certificate