Infineon Technologies_BFP450H6327XTSA1

Infineon Technologies
BFP450H6327XTSA1  
Bipolar RF Transistors

BFP450H6327XTSA1
283-BFP450H6327XTSA1
Ersa
Infineon Technologies-BFP450H6327XTSA1-datasheets-6883049.pdf
RF TRANS NPN 5V 24GHZ SOT343-4
In Stock : 4780

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BFP450H6327XTSA1 Description

BFP450H6327XTSA1 Description

The BFP450H6327XTSA1 is a high-performance NPN Bipolar RF Transistor designed and manufactured by Infineon Technologies. It is specifically engineered for applications requiring high power and exceptional frequency performance. With a maximum power rating of 450mW and an impressive frequency transition of 24GHz, this device is an excellent choice for demanding RF applications. The BFP450H6327XTSA1 is currently active and complies with the latest RoHS standards, making it an environmentally friendly option.

BFP450H6327XTSA1 Features

  • Operating Temperature: The device can operate at a maximum junction temperature of 150°C, ensuring reliable performance in a wide range of environments.
  • Frequency - Transition: With a transition frequency of 24GHz, the BFP450H6327XTSA1 is capable of handling high-frequency signals with ease.
  • Current - Collector (Ic) (Max): The maximum collector current is 100mA, providing ample current for various applications.
  • Voltage - Collector Emitter Breakdown (Max): The device can withstand a maximum voltage of 5V, making it suitable for low-voltage applications.
  • Noise Figure: The typical noise figure at 1.8GHz is 1.25dB, ensuring minimal signal degradation.
  • Gain: The device offers a gain of 15.5dB, providing excellent signal amplification.
  • DC Current Gain (hFE) (Min): With a minimum current gain of 60 at 50mA and 4V, the BFP450H6327XTSA1 ensures consistent performance.
  • Moisture Sensitivity Level (MSL): Rated at level 1, the device is not sensitive to moisture, making it suitable for use in humid environments.

BFP450H6327XTSA1 Applications

The BFP450H6327XTSA1 is ideal for a variety of applications due to its high power and frequency capabilities. Some specific use cases include:

  • RF Amplifiers: The high power and frequency ratings make it suitable for use in RF amplifiers, where high gain and low noise are crucial.
  • Communication Systems: The device's performance characteristics make it an excellent choice for communication systems that require high-frequency signal processing.
  • Automotive Radar: The BFP450H6327XTSA1's high-frequency capabilities make it ideal for use in automotive radar systems, where high-speed signal processing is essential for safety.

Conclusion of BFP450H6327XTSA1

The BFP450H6327XTSA1 is a powerful and versatile NPN Bipolar RF Transistor from Infineon Technologies. Its high power rating, exceptional frequency performance, and low noise figure make it an ideal choice for a wide range of applications, including RF amplifiers, communication systems, and automotive radar. With its RoHS compliance and moisture sensitivity level of 1, the BFP450H6327XTSA1 is not only a high-performance device but also an environmentally friendly option.

Tech Specifications

Configuration
Maximum Emitter Cut-Off Current (nA)
Maximum Power 1dB Compression (dBm)
Typical Power Gain (dB)
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Maximum 3rd Order Intercept Point (dBm)
Supplier Package
Transistor Type
Package / Case
REACH Status
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
HTSUS
Package
Gain
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum DC Collector Current Range (A)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Maximum Noise Figure (dB)
Package Height
Mfr
RoHS Status
Maximum Transition Frequency (MHz)
Maximum Collector-Emitter Voltage Range (V)
Material
Package Length
Series
Type
Minimum DC Current Gain
Minimum DC Current Gain Range
Typical Output Capacitance (pF)
Maximum DC Collector Current (A)
Power - Max
Part Status
Noise Figure (dB Typ @ f)
Package Width
Maximum Collector Cut-Off Current (nA)
Typical Input Capacitance (pF)
DC Current Gain (hFE) (Min) @ Ic, Vce
Operational Bias Conditions
Base Product Number
Mounting Style
Unit Weight
Qualification
Technology
USHTS
RoHS

BFP450H6327XTSA1 Documents

Download datasheets and manufacturer documentation for BFP450H6327XTSA1

Ersa BFP450      
Ersa Reel Cover Tape Chg 16/Feb/2016       Recyclable Glass Carrier 14/Oct/2014      
Ersa Part Number Guide      
Ersa Infineon-RFTransistor-AWR_MWO_Design_Kit-SM-v02_10-EN Spice Model      
Ersa RoHS Certificate      

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