Infineon Technologies_BFP450H6327XTSA1
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Infineon Technologies
BFP450H6327XTSA1

283-BFP450H6327XTSA1
PDF Datasheet
RF TRANS NPN 5V 24GHZ SOT343-4
4 Weeks

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Tech Specifications

Configuration
Single Dual Emitter
Maximum Emitter Cut-Off Current (nA)
3000
Maximum Power 1dB Compression (dBm)
19(Typ)
Typical Power Gain (dB)
35.5
PPAP
Unknown
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
5V
Automotive
Yes
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BFP450H6327XTSA1 Description

BFP450H6327XTSA1 Description

The BFP450H6327XTSA1 is a high-performance NPN Bipolar RF Transistor designed and manufactured by Infineon Technologies. It is specifically engineered for applications requiring high power and exceptional frequency performance. With a maximum power rating of 450mW and an impressive frequency transition of 24GHz, this device is an excellent choice for demanding RF applications. The BFP450H6327XTSA1 is currently active and complies with the latest RoHS standards, making it an environmentally friendly option.

BFP450H6327XTSA1 Features

  • Operating Temperature: The device can operate at a maximum junction temperature of 150°C, ensuring reliable performance in a wide range of environments.
  • Frequency - Transition: With a transition frequency of 24GHz, the BFP450H6327XTSA1 is capable of handling high-frequency signals with ease.
  • Current - Collector (Ic) (Max): The maximum collector current is 100mA, providing ample current for various applications.
  • Voltage - Collector Emitter Breakdown (Max): The device can withstand a maximum voltage of 5V, making it suitable for low-voltage applications.
  • Noise Figure: The typical noise figure at 1.8GHz is 1.25dB, ensuring minimal signal degradation.
  • Gain: The device offers a gain of 15.5dB, providing excellent signal amplification.
  • DC Current Gain (hFE) (Min): With a minimum current gain of 60 at 50mA and 4V, the BFP450H6327XTSA1 ensures consistent performance.
  • Moisture Sensitivity Level (MSL): Rated at level 1, the device is not sensitive to moisture, making it suitable for use in humid environments.

BFP450H6327XTSA1 Applications

The BFP450H6327XTSA1 is ideal for a variety of applications due to its high power and frequency capabilities. Some specific use cases include:

  • RF Amplifiers: The high power and frequency ratings make it suitable for use in RF amplifiers, where high gain and low noise are crucial.
  • Communication Systems: The device's performance characteristics make it an excellent choice for communication systems that require high-frequency signal processing.
  • Automotive Radar: The BFP450H6327XTSA1's high-frequency capabilities make it ideal for use in automotive radar systems, where high-speed signal processing is essential for safety.

Conclusion of BFP450H6327XTSA1

The BFP450H6327XTSA1 is a powerful and versatile NPN Bipolar RF Transistor from Infineon Technologies. Its high power rating, exceptional frequency performance, and low noise figure make it an ideal choice for a wide range of applications, including RF amplifiers, communication systems, and automotive radar. With its RoHS compliance and moisture sensitivity level of 1, the BFP450H6327XTSA1 is not only a high-performance device but also an environmentally friendly option.

FAQ

What voltage specification is listed for BFP450H6327XTSA1?
The listed voltage-related specification for BFP450H6327XTSA1 is 5V.
What operating temperature range does BFP450H6327XTSA1 support?
What is the standard lead time for BFP450H6327XTSA1?
What package or case is BFP450H6327XTSA1 available in?
Is BFP450H6327XTSA1 currently in stock?
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