Infineon Technologies_BFP620H7764XTSA1
original

Infineon Technologies
BFP620H7764XTSA1

283-BFP620H7764XTSA1
PDF Datasheet
RF TRANS NPN 2.8V 65GHZ SOT343-4
4 Weeks

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Tech Specifications

Configuration
Single Dual Emitter
Maximum Emitter Cut-Off Current (nA)
900
Maximum Power 1dB Compression (dBm)
14.5(Typ)
Typical Power Gain (dB)
21.5
PPAP
Unknown
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
2.8V
Automotive
Yes
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BFP620H7764XTSA1 Description

BFP620H7764XTSA1 Description

The BFP620H7764XTSA1 is a high-performance NPN bipolar RF transistor designed and manufactured by Infineon Technologies. This device is part of the Bipolar RF Transistors category and boasts a series of advanced technical specifications that make it ideal for a variety of applications. With an operating temperature of 150°C (TJ) and a frequency transition of 65GHz, the BFP620H7764XTSA1 is designed to deliver exceptional performance in high-frequency and high-temperature environments.

BFP620H7764XTSA1 Features

  • Technical Specifications:

    • Operating Temperature: 150°C (TJ)
    • Frequency - Transition: 65GHz
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 2.8V
    • Power - Max: 185mW
    • Transistor Type: NPN
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
    • Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
    • Gain: 21.5dB
  • Performance Benefits:

    • Surface Mount technology for compact design and ease of integration
    • Active product status ensuring ongoing availability and support
    • REACH Unaffected and ROHS3 Compliant, adhering to environmental regulations
    • Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating high reliability in various environmental conditions
  • Unique Features and Advantages:

    • The BFP620H7764XTSA1 stands out with its ability to operate at a high transition frequency of 65GHz, making it suitable for advanced communication systems.
    • The device's low noise figure and high gain make it an excellent choice for applications requiring high signal integrity.

BFP620H7764XTSA1 Applications

The BFP620H7764XTSA1 is ideal for use in a range of high-frequency applications due to its superior performance characteristics. Some specific use cases include:

  • RF and Microwave Communication Systems: The high transition frequency and low noise figure make it suitable for use in communication systems that require high data transfer rates and low noise interference.
  • Automotive Radar Systems: The device's ability to operate at high temperatures and high frequencies makes it ideal for use in automotive radar systems where reliability and performance are critical.
  • Satellite Communication Equipment: The BFP620H7764XTSA1 can be used in satellite communication equipment due to its high power handling capability and ability to operate in extreme temperature conditions.

Conclusion of BFP620H7764XTSA1

In conclusion, the BFP620H7764XTSA1 from Infineon Technologies is a highly capable NPN bipolar RF transistor designed for high-frequency and high-temperature applications. Its unique combination of technical specifications, performance benefits, and compliance with environmental regulations make it a standout choice for a variety of advanced electronic systems. Whether used in communication systems, automotive radar, or satellite equipment, the BFP620H7764XTSA1 delivers reliable performance and high signal integrity.

FAQ

What is the mounting type of BFP620H7764XTSA1?
BFP620H7764XTSA1 uses a Surface Mount mounting style based on the listed product specifications.
What is BFP620H7764XTSA1?
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