Infineon Technologies_BFP780H6327XTSA1
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Infineon Technologies
BFP780H6327XTSA1

283-BFP780H6327XTSA1
PDF Datasheet
RF TRANS NPN 6.1V 900MHZ SOT343

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Tech Specifications

Operating Temperature
150°C (TJ)
Frequency - Transition
900MHz
Current - Collector (Ic) (Max)
120mA
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Obsolete
Voltage - Collector Emitter Breakdown (Max)
6.1V
Supplier Device Package
PG-SOT343-4-1
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BFP780H6327XTSA1 Description

BFP780H6327XTSA1 Description

The BFP780H6327XTSA1 is an NPN RF bipolar transistor from Infineon Technologies, designed for high-frequency applications up to 900MHz transition frequency. With a collector-emitter breakdown voltage of 6.1V and a maximum collector current of 120mA, it delivers robust performance in RF amplification circuits. Packaged in a SOT343 (SC-70) surface-mount form factor, it is optimized for compact, high-density PCB designs. Although marked as obsolete, it remains a reliable choice for legacy systems due to its low noise figure (1.2dB–2.4dB @ 900MHz–3.5GHz) and high gain (27dB).

BFP780H6327XTSA1 Features

  • High-Frequency Performance: Optimized for 900MHz–3.5GHz applications, making it ideal for RF front-end circuits.
  • Low Noise Figure: 1.2dB–2.4dB ensures minimal signal degradation in sensitive receivers.
  • High Gain: 27dB amplification enhances signal integrity in low-power systems.
  • Thermal Resilience: Operates up to 150°C junction temperature (TJ), suitable for harsh environments.
  • Compact & RoHS3 Compliant: SOT343 package with MSL1 (unlimited shelf life) supports eco-friendly manufacturing.
  • DC Current Gain (hFE): 85 @ 90mA, 5V, ensuring stable linear amplification.

BFP780H6327XTSA1 Applications

  • Wireless Communication: Base stations, GSM/UMTS/LTE power amplifiers, and RF modules.
  • Low-Noise Amplifiers (LNAs): Ideal for receiver front-ends in radar and satellite systems.
  • Portable Devices: Used in handheld radios, IoT sensors, and other battery-operated RF systems.
  • Test & Measurement Equipment: High-gain stages in signal generators and spectrum analyzers.

Conclusion of BFP780H6327XTSA1

The BFP780H6327XTSA1 excels in high-frequency, low-noise RF amplification, offering a balance of gain, thermal stability, and compactness. While obsolete, its performance metrics (e.g., 27dB gain, 1.2dB noise) make it a legacy favorite for wireless infrastructure and precision RF systems. Engineers seeking alternatives should verify newer Infineon RF transistors, but this model remains a benchmark for cost-sensitive, high-performance designs.

FAQ

What is BFP780H6327XTSA1?
BFP780H6327XTSA1 is a Bipolar RF Transistors from Infineon Technologies. This product page provides its main specifications, pricing information, availability, and inquiry options.
What voltage specification is listed for BFP780H6327XTSA1?
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