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BFR181WH6327XTSA1

BFR181WH6327XTSA1 Description

The BFR181WH6327XTSA1 is a high-performance NPN Bipolar RF Transistor from Infineon Technologies. It is designed to operate at 12V with an 8GHz frequency transition, making it ideal for high-frequency applications. The device features a maximum collector-emitter breakdown voltage of 12V and a maximum power dissipation of 175mW. With a surface mount packaging, it is suitable for a wide range of applications.

BFR181WH6327XTSA1 Features

• Operating Temperature: 150°C (TJ)
• Frequency - Transition: 8GHz
• Current - Collector (Ic) (Max): 20mA
• Voltage - Collector Emitter Breakdown (Max): 12V
• Power - Max: 175mW
• Gain: 19dB
• Noise Figure: 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
• RoHS Status: ROHS3 Compliant
• REACH Status: REACH Unaffected
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

BFR181WH6327XTSA1 Applications

The BFR181WH6327XTSA1 is ideal for various high-frequency applications due to its excellent performance and reliability. Some specific use cases include:

1. RF Amplifiers: The high gain and low noise figure make it suitable for RF amplifiers in communication systems.
2. RF Switches: The device's high-frequency capabilities and low power dissipation make it ideal for RF switches in wireless communication systems.
3. Receiver Front-Ends: The low noise figure and high gain make it suitable for receiver front-ends in radio systems.

Conclusion of BFR181WH6327XTSA1

The BFR181WH6327XTSA1 is a versatile and high-performance NPN Bipolar RF Transistor from Infineon Technologies. Its unique combination of high gain, low noise figure, and excellent frequency response make it ideal for a wide range of high-frequency applications. With its RoHS3 compliance and REACH unaffected status, it is an environmentally friendly choice for your next project.