Infineon Technologies_BFR183E6327HTSA1
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Infineon Technologies
BFR183E6327HTSA1

283-BFR183E6327HTSA1
PDF Datasheet
RF TRANS NPN 12V 8GHZ SOT23-3
4 Weeks

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ISO45001
ISO14001
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Tech Specifications

Configuration
Single
Maximum Emitter Cut-Off Current (nA)
1000
Typical Power Gain (dB)
17.5
PPAP
Unknown
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
12V
Automotive
Yes
Supplier Package
SOT-23
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BFR183E6327HTSA1 Description

BFR183E6327HTSA1 Description

The BFR183E6327HTSA1 is a high-performance NPN RF transistor from Infineon Technologies, designed for low-noise amplification (LNA) and high-frequency signal processing in the microwave and RF spectrum. With a transition frequency (fT) of 8GHz, it excels in applications requiring ultra-low noise (0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz) and high gain (17.5dB). Its 12V collector-emitter breakdown voltage (VCEO) and 65mA maximum collector current (Ic) make it suitable for low-power RF amplification in compact designs. Packaged in a SOT23-3 surface-mount form factor, it is optimized for automated assembly and high-density PCB layouts.

BFR183E6327HTSA1 Features

  • Ultra-Low Noise Figure: 0.9dB ~ 1.4dB at 900MHz ~ 1.8GHz, ideal for sensitive RF front-ends.
  • High Gain (17.5dB): Enhances signal integrity in weak-signal environments.
  • 8GHz Transition Frequency: Supports high-speed switching and wideband amplification.
  • Robust Power Handling: 450mW max power dissipation with 150°C junction temperature (TJ).
  • Low DC Current Gain (hFE): 70 @ 15mA, 8V, ensuring stable biasing.
  • RoHS3 & REACH Compliant: Environmentally friendly and suitable for global markets.
  • MSL1 (Unlimited Shelf Life): No moisture sensitivity concerns for long-term storage.

BFR183E6327HTSA1 Applications

  • Wireless Communication: LNA stages in 5G, LTE, and Wi-Fi modules.
  • RF Front-End Modules: Cellular base stations, IoT devices, and satellite receivers.
  • Test & Measurement Equipment: Signal generators, spectrum analyzers, and RF test circuits.
  • Consumer Electronics: Smartphones, GPS, and Bluetooth/WLAN applications.
  • Industrial RF Systems: Radar, telemetry, and short-range wireless links.

Conclusion of BFR183E6327HTSA1

The BFR183E6327HTSA1 stands out as a high-reliability, low-noise RF transistor for demanding high-frequency applications. Its exceptional noise performance, high gain, and compact SOT23-3 package make it a preferred choice for engineers designing next-generation RF systems. Whether in consumer, industrial, or telecom applications, this transistor delivers superior signal fidelity and efficiency, backed by Infineon’s proven semiconductor expertise.

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