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BFR360L3E6765XTMA1

BFR360L3E6765XTMA1 Description

The BFR360L3E6765XTMA1 is a Bipolar RF Transistor from Infineon Technologies, designed for high-performance applications requiring robust signal processing capabilities. With an operating temperature range of 150°C (TJ) and a frequency transition of 14GHz, this NPN transistor is well-suited for demanding RF applications. It boasts a maximum collector current (Ic) of 35mA, a maximum collector-emitter breakdown voltage of 9V, and a maximum power dissipation of 210mW. The BFR360L3E6765XTMA1 is surface mountable and is currently an active product, ensuring availability and support for your projects.

BFR360L3E6765XTMA1 Features

• High Operating Temperature: Capable of withstanding temperatures up to 150°C (TJ), making it suitable for harsh environments.
• Broad Frequency Range: Offers a frequency transition of 14GHz, ideal for high-frequency applications.
• Low Noise Figure: Features a noise figure of 1dB to 1.3dB at 1.8GHz to 3GHz, ensuring minimal signal degradation.
• High Gain: Provides a gain range of 11.5dB to 16dB, enhancing signal strength in various applications.
• RoHS Compliance: Complies with RoHS3 standards, ensuring environmental responsibility.
• Moisture Sensitivity Level (MSL) 1: Unaffected by moisture, allowing for flexible handling and storage.

BFR360L3E6765XTMA1 Applications

The BFR360L3E6765XTMA1 is ideal for a variety of applications where high-frequency signal processing and robust performance are critical:

• RF Amplifiers: Utilized in the design of RF amplifiers for telecommunications and radar systems.
• Receiver Front-Ends: Employed in the front-end modules of receivers for improved signal reception and processing.
• Transmitter Modules: Integrated into transmitter modules for enhanced signal transmission capabilities.
• Satellite Communication Systems: Deployed in satellite communication systems for reliable signal transmission and reception.

Conclusion of BFR360L3E6765XTMA1

The BFR360L3E6765XTMA1 is a versatile and high-performing Bipolar RF Transistor from Infineon Technologies. Its unique combination of high operating temperature, broad frequency range, low noise figure, and RoHS compliance make it an excellent choice for a wide range of applications, including RF amplifiers, receiver front-ends, transmitter modules, and satellite communication systems. With its robust performance and environmental responsibility, the BFR360L3E6765XTMA1 is a reliable solution for your high-frequency signal processing needs.