Infineon Technologies_BFR360TE6327
original

Infineon Technologies
BFR360TE6327

283-BFR360TE6327
PDF Datasheet
TRANSISTOR RF NPN 6V SC-75

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Tech Specifications

Mounting
SMD (SMT)
Typical Gain (hFE) (Min)
60 @ 15mA, 3V
Frequency - Transition
14GHz
VCEO Maximum Collector-Emitter Breakdown Voltage
9V
Maximum Power Dissipation
210mW
Noise Figure (dB Typ @ f)
1dB @ 1.8GHz
Transistor Polarity
NPN
Package
Reel - TR
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BFR360TE6327 Description

Reel - TR provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Bipolar RF Transistors that the BFR360TE6327 belongs to can be classified under the Discrete Semiconductors. BFR360TE6327 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. BFR360TE6327 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Infineon Technologies plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Infineon Technologies is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Infineon Technologies builds trust with consumers and enhances the overall reputation of their products.

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