Infineon Technologies_BSC026N04LSATMA1
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Infineon Technologies
BSC026N04LSATMA1

278-BSC026N04LSATMA1
PDF Datasheet
MOSFET N-CH 40V 23A/100A TDSON
20 Weeks

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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
37
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
2300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Typical Rise Time (ns)
4
PPAP
No
Channel Mode
Enhancement
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BSC026N04LSATMA1 Description

BSC026N04LSATMA1 Description

The BSC026N04LSATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for a wide range of applications requiring efficient power management and control. This device features a 40V drain-to-source voltage rating and can handle continuous drain currents of up to 23A at 25°C ambient temperature and 100A at case temperature. With a low on-resistance of 2.6mOhm at 50A and 10V gate-source voltage, the BSC026N04LSATMA1 offers excellent efficiency and performance.

BSC026N04LSATMA1 Features

  • Technology: MOSFET (Metal Oxide) - Provides high efficiency and fast switching capabilities.
  • Input Capacitance (Ciss): 2300 pF @ 20 V - Minimizes input capacitance for faster switching.
  • Gate Charge (Qg): 32 nC @ 10 V - Reduces switching losses and improves efficiency.
  • Rds On (Max): 2.6mOhm @ 50A, 10V - Offers low on-resistance for high efficiency.
  • Vgs(th) (Max): 2V @ 250µA - Ensures reliable turn-on and control.
  • Series: OptiMOS™ - Known for its superior performance and reliability.
  • Mounting Type: Surface Mount - Facilitates easy integration into surface-mount technology (SMT) designs.

BSC026N04LSATMA1 Applications

The BSC026N04LSATMA1 is ideal for applications where high efficiency, fast switching, and low on-resistance are critical. Some specific use cases include:

  1. Power Management: In power supply designs, the BSC026N04LSATMA1 can efficiently manage and control power flow, reducing power losses and improving overall system efficiency.
  2. Motor Control: The device's high current handling capability and fast switching make it suitable for motor control applications, such as in industrial automation and robotics.
  3. Automotive Applications: The BSC026N04LSATMA1 can be used in automotive systems, such as electric power steering and battery management, where high reliability and performance are essential.

Conclusion of BSC026N04LSATMA1

The BSC026N04LSATMA1 from Infineon Technologies is a high-performance N-Channel MOSFET that offers excellent efficiency, fast switching, and low on-resistance. Its unique features, such as low gate charge and input capacitance, make it an ideal choice for applications requiring high efficiency and performance. With its OptiMOS™ series pedigree, the BSC026N04LSATMA1 delivers reliable and robust performance in a wide range of applications, making it a preferred choice for engineers designing power management and motor control systems.

FAQ

What is BSC026N04LSATMA1?
BSC026N04LSATMA1 is a Single FETs, MOSFETs from Infineon Technologies. This product page provides its main specifications, pricing information, availability, and inquiry options.
What voltage specification is listed for BSC026N04LSATMA1?
What operating temperature range does BSC026N04LSATMA1 support?
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