Infineon Technologies_BSC026N08NS5ATMA1
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Infineon Technologies
BSC026N08NS5ATMA1

278-BSC026N08NS5ATMA1
PDF Datasheet
MOSFET N-CH 80V 23A/100A TDSON
20 Weeks

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ISO45001
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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
47
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
6800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
Typical Rise Time (ns)
14
PPAP
Unknown
Channel Mode
Enhancement
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BSC026N08NS5ATMA1 Description

BSC026N08NS5ATMA1 Description

The BSC026N08NS5ATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high efficiency and reliability. With its advanced technology and robust design, this MOSFET offers superior performance in a wide range of applications.

BSC026N08NS5ATMA1 Features

  • Technology: MOSFET (Metal Oxide) - Utilizing the latest MOSFET technology for improved performance and reliability.
  • Drain to Source Voltage (Vdss): 80V - Capable of handling high voltage applications.
  • Current - Continuous Drain (Id): 23A (Ta), 100A (Tc) - Offers high current handling capabilities for demanding applications.
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V - Provides low on-resistance for efficient power dissipation.
  • Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V - Minimizes switching losses for improved efficiency.
  • Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V - Reduces parasitic effects for better performance.
  • Vgs (Max): ±20V - Offers a wide voltage range for compatibility with various gate drive circuits.
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V - Ensures reliable operation with different gate drive voltages.
  • Power Dissipation (Max): 2.5W (Ta), 156W (Tc) - Capable of handling high power dissipation in various thermal conditions.
  • Mounting Type: Surface Mount - Facilitates easy integration into surface-mount applications.
  • Package: Tape & Reel (TR) - Ideal for automated assembly processes.
  • Series: OptiMOS™ - Part of Infineon's premium MOSFET series, known for its high performance and reliability.

BSC026N08NS5ATMA1 Applications

The BSC026N08NS5ATMA1 is ideal for a variety of applications where high efficiency, reliability, and performance are critical:

  1. Power Electronics: Due to its high voltage and current handling capabilities, this MOSFET is suitable for power conversion and management in various electronic devices.
  2. Automotive Electronics: Its robust design and wide operating temperature range make it an excellent choice for automotive applications, such as electric vehicle charging systems and powertrain control.
  3. Industrial Control: The BSC026N08NS5ATMA1's low on-resistance and high efficiency make it ideal for motor control and other industrial applications requiring precise power regulation.
  4. Renewable Energy: Its ability to handle high voltages and currents makes it suitable for solar inverters and other renewable energy systems.

Conclusion of BSC026N08NS5ATMA1

The BSC026N08NS5ATMA1 from Infineon Technologies is a high-performance N-Channel MOSFET that offers superior efficiency, reliability, and performance for a wide range of applications. Its advanced technology, low on-resistance, and high current handling capabilities make it an ideal choice for power electronics, automotive, industrial control, and renewable energy systems. With its OptiMOS™ series pedigree, the BSC026N08NS5ATMA1 delivers the performance and reliability you need for your demanding applications.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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