Infineon Technologies
BSC026NE2LS5ATMA1

278-BSC026NE2LS5ATMA1
PDF Datasheet
MOSFET N-CH 25V 24A/82A TDSON
26 Weeks

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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
13
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Typical Rise Time (ns)
3
PPAP
No
Channel Mode
Enhancement
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BSC026NE2LS5ATMA1 Description

BSC026NE2LS5ATMA1 Description

The BSC026NE2LS5ATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for demanding applications requiring high efficiency and reliability. This device features a robust 25V drain-to-source voltage rating and can handle continuous drain currents of up to 24A at 25°C ambient temperature and 82A at case temperature. With a maximum gate-source voltage of ±16V, the BSC026NE2LS5ATMA1 ensures stable operation across a wide range of input voltages.

BSC026NE2LS5ATMA1 Features

  • Technology: Advanced MOSFET (Metal Oxide) technology for high efficiency and low power dissipation.
  • Input Capacitance (Ciss): 1100 pF @ 12V, minimizing input capacitance for faster switching speeds.
  • Gate Charge (Qg): 16 nC @ 10V, reducing switching losses and improving efficiency.
  • Rds On (Max): 2.6mOhm @ 30A, 10V, providing low on-resistance for minimal power loss.
  • Vgs(th) (Max): 2V @ 250µA, ensuring reliable threshold voltage performance.
  • Power Dissipation: 2.5W (Ta), 29W (Tc), suitable for high-power applications.
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.
  • RoHS Status: ROHS3 Compliant, adhering to environmental standards.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), allowing for flexible storage and handling conditions.

BSC026NE2LS5ATMA1 Applications

The BSC026NE2LS5ATMA1 is ideal for a variety of high-power applications, including:

  • Power Supplies: Utilizing its high drain current and low on-resistance, the BSC026NE2LS5ATMA1 is perfect for power supply designs requiring high efficiency and reliability.
  • Automotive Electronics: Withstanding high power dissipation and operating over a wide temperature range, this MOSFET is suitable for automotive applications such as electric vehicle charging systems and power management.
  • Industrial Control Systems: The BSC026NE2LS5ATMA1's robust performance and low power dissipation make it an excellent choice for industrial control systems, where reliability and efficiency are critical.

Conclusion of BSC026NE2LS5ATMA1

The BSC026NE2LS5ATMA1 from Infineon Technologies is a powerful, reliable, and efficient N-Channel MOSFET designed for high-power applications. Its advanced technology, low on-resistance, and compliance with environmental standards make it an ideal choice for power supplies, automotive electronics, and industrial control systems. With its unique combination of performance benefits and robust features, the BSC026NE2LS5ATMA1 stands out as a superior solution in the competitive landscape of high-power MOSFETs.

FAQ

What voltage specification is listed for BSC026NE2LS5ATMA1?
The listed voltage-related specification for BSC026NE2LS5ATMA1 is 25 V.
What is BSC026NE2LS5ATMA1?
What is the standard lead time for BSC026NE2LS5ATMA1?
What is the mounting type of BSC026NE2LS5ATMA1?
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