Infineon Technologies_BSC028N06NSATMA1
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Infineon Technologies
BSC028N06NSATMA1

278-BSC028N06NSATMA1
PDF Datasheet
MOSFET N-CH 60V 23A/100A TDSON
20 Weeks

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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
19
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Typical Rise Time (ns)
38
PPAP
Unknown
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
11
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BSC028N06NSATMA1 Description

BSC028N06NSATMA1 Description

The BSC028N06NSATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies. It is designed for applications requiring high efficiency and low power consumption. The device is built using advanced MOSFET technology, ensuring superior performance and reliability. With a drain-source voltage of 60V and a continuous drain current of 23A at 25°C, it is suitable for a wide range of applications.

BSC028N06NSATMA1 Features

  • Technology: Advanced MOSFET (Metal Oxide) technology for high efficiency and low power consumption.
  • Drain-Source Voltage (Vdss): 60V, suitable for high-voltage applications.
  • Continuous Drain Current: 23A at 25°C (Ta) and 100A at Tc, providing high current handling capability.
  • Rds On (Max): 2.8mOhm at 50A and 10V, ensuring low on-resistance and high efficiency.
  • Gate Charge (Qg): 37nC at 10V, reducing switching losses and improving performance.
  • Input Capacitance (Ciss): 2700pF at 30V, minimizing input capacitance for faster switching.
  • Vgs (Max): ±20V, providing a wide voltage range for gate control.
  • Mounting Type: Surface Mount, ideal for compact and space-constrained applications.
  • Package: Tape & Reel (TR)
  • REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.
  • RoHS Status: ROHS3 Compliant, adhering to environmental and safety standards.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), suitable for various environmental conditions.

BSC028N06NSATMA1 Applications

The BSC028N06NSATMA1 is ideal for applications requiring high efficiency, low power consumption, and high current handling capability. Some specific use cases include:

  1. Power Supplies: High-efficiency power conversion and regulation in various power supply designs.
  2. Motor Control: Efficient and precise control of electric motors in industrial and automotive applications.
  3. Battery Management: High-current charging and discharging in battery management systems.
  4. Industrial Automation: Reliable and efficient control of actuators and motors in industrial automation systems.

Conclusion of BSC028N06NSATMA1

The BSC028N06NSATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, offering superior efficiency, low power consumption, and high current handling capability. Its advanced MOSFET technology, combined with its unique features, makes it an ideal choice for a wide range of applications, including power supplies, motor control, battery management, and industrial automation. With its compliance with REACH and RoHS regulations, the BSC028N06NSATMA1 is a reliable and environmentally friendly solution for your electronic design needs.

FAQ

What operating temperature range does BSC028N06NSATMA1 support?
BSC028N06NSATMA1 has an operating temperature range of -55°C ~ 150°C (TJ).
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