Infineon Technologies Tariff Inquiry

BSC050NE2LSATMA1

BSC050NE2LSATMA1 Description

The BSC050NE2LSATMA1 is a high-performance N-channel MOSFET from Infineon Technologies, designed for applications requiring high efficiency and reliability. With a drain-source voltage (Vdss) of 25V, this MOSFET can handle continuous drain currents of up to 39A at 25°C ambient temperature and 58A at case temperature. The device features a low on-resistance of 5mOhm at 30A and 10V, ensuring minimal power loss and high efficiency in operation.

BSC050NE2LSATMA1 Features

• Technology: MOSFET (Metal Oxide)
• Series: OptiMOS™
• Input Capacitance (Ciss): 760 pF @ 12 V
• Gate Charge (Qg): 10.4 nC @ 10 V
• Drain to Source Voltage (Vdss): 25 V
• Power Dissipation: 2.5W (Ta), 28W (Tc)
• Rds On (Max): 5mOhm @ 30A, 10V
• Vgs(th) (Max): 2V @ 250µA
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V
• Current - Continuous Drain (Id): 39A (Ta), 58A (Tc)
• Mounting Type: Surface Mount
• Package: Tape & Reel (TR)
• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• REACH Status: REACH Unaffected
• RoHS Status: ROHS3 Compliant
• ECCN: EAR99
• HTSUS: 8541.29.0095

BSC050NE2LSATMA1 Applications

The BSC050NE2LSATMA1 is ideal for a wide range of applications due to its high performance and reliability. Some specific use cases include:

1. Power Management: The MOSFET's high current handling capability and low on-resistance make it suitable for power management applications in consumer electronics, industrial equipment, and automotive systems.
2. Motor Control: The device's ability to handle high currents and voltages makes it an excellent choice for motor control applications, such as electric vehicles, robotics, and industrial automation.
3. Switching Applications: The BSC050NE2LSATMA1's low gate charge and input capacitance enable fast switching speeds, making it ideal for high-frequency switching applications in power supplies and inverters.

Conclusion of BSC050NE2LSATMA1

The BSC050NE2LSATMA1 is a versatile and high-performance N-channel MOSFET from Infineon Technologies. Its unique combination of high current handling, low on-resistance, and fast switching capabilities make it an excellent choice for a wide range of applications, including power management, motor control, and switching. With its robust performance and compliance with industry standards, the BSC050NE2LSATMA1 is a reliable and efficient solution for demanding electronic systems.