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BSC0802LSATMA1

BSC0802LSATMA1 Description

The BSC0802LSATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for use in a variety of electronic applications. This device features a drain-source voltage (Vdss) of 100V and can handle continuous drain currents of 20A at 25°C and 100A at case temperature (Tc). The BSC0802LSATMA1 is designed for surface mount applications and is packaged in a tape and reel (TR) format.

BSC0802LSATMA1 Features

• Technology: MOSFET (Metal Oxide) - This advanced technology offers high efficiency and low power consumption.
• Input Capacitance (Ciss): 6500 pF @ 50 V - This low capacitance enables fast switching and reduces power loss.
• Gate Charge (Qg): 46 nC @ 4.5 V - A low gate charge minimizes switching losses and improves efficiency.
• Rds On (Max): 3.4 mOhm @ 50A, 10V - This low on-resistance reduces power dissipation and improves performance.
• Vgs(th) (Max): 2.3V @ 115µA - This high threshold voltage ensures stable operation and reduces the risk of false triggering.
• Series: OptiMOS™ 5 - This series is known for its excellent performance and reliability in demanding applications.
• Power Dissipation (Max): 156W (Tc) - This high power dissipation capability allows the device to handle high power loads.
• RoHS Status: ROHS3 Compliant - This ensures the device meets environmental regulations and is suitable for use in green electronics.
• REACH Status: REACH Unaffected - This indicates that the device does not contain any substances of very high concern (SVHCs) listed under the REACH regulation.

BSC0802LSATMA1 Applications

The BSC0802LSATMA1 is ideal for use in a variety of high-power electronic applications, including:

• Power Supplies: Due to its high drain-source voltage and low on-resistance, this MOSFET is well-suited for use in power supply circuits.
• Motor Controls: The device's ability to handle high currents makes it an excellent choice for motor control applications.
• Automotive Electronics: The BSC0802LSATMA1 can be used in various automotive electronics, such as engine control units and power windows.
• Industrial Controls: This MOSFET's high power dissipation and robust performance make it suitable for use in industrial control systems.

Conclusion of BSC0802LSATMA1

The BSC0802LSATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, offering excellent technical specifications and performance benefits. Its low on-resistance, high threshold voltage, and low gate charge make it an ideal choice for a variety of high-power electronic applications. However, it is important to note that this product is now obsolete, and alternative models should be considered for new designs. Despite its obsolescence, the BSC0802LSATMA1 remains a reliable and efficient solution for existing applications that require its specific performance characteristics.