Infineon Technologies_BSC080N03LSGATMA1
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Infineon Technologies
BSC080N03LSGATMA1

278-BSC080N03LSGATMA1
PDF Datasheet
MOSFET N-CH 30V 14A/53A TDSON

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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
15
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Typical Rise Time (ns)
2.8
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
3.3
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BSC080N03LSGATMA1 Description

BSC080N03LSGATMA1 Description

The BSC080N03LSGATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high efficiency and power handling. With a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 14A at 25°C (Ta) and 53A at Tc, this device offers excellent performance in a compact TDSON package. The BSC080N03LSGATMA1 is part of the OptiMOS™ series, known for its low on-resistance and high efficiency.

BSC080N03LSGATMA1 Features

  • Technology: MOSFET (Metal Oxide) - Provides high efficiency and low power loss.
  • Drain to Source Voltage (Vdss): 30V - Suitable for high voltage applications.
  • Continuous Drain Current (Id): 14A at 25°C (Ta) and 53A at Tc - Offers high current handling capability.
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V - Low on-resistance for high efficiency.
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10V - Fast switching and low switching losses.
  • Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V - Low input capacitance for fast response.
  • Vgs (Max): ±20V - Wide gate voltage range for compatibility with various gate drivers.
  • Mounting Type: Surface Mount - Ideal for PCB applications.
  • Package: Tape & Reel (TR) - Suitable for automated assembly processes.

BSC080N03LSGATMA1 Applications

The BSC080N03LSGATMA1 is ideal for applications requiring high efficiency and power handling in a compact form factor. Some specific use cases include:

  1. Power Management: In power supply designs, the BSC080N03LSGATMA1's high efficiency and low on-resistance make it suitable for power conversion and regulation.
  2. Motor Control: The high current handling capability and low on-resistance of the BSC080N03LSGATMA1 make it ideal for motor control applications, such as in industrial automation and robotics.
  3. Automotive Electronics: The BSC080N03LSGATMA1's high voltage and current ratings, along with its robustness, make it suitable for automotive applications, such as electric vehicle charging systems and powertrain control.

Conclusion of BSC080N03LSGATMA1

The BSC080N03LSGATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, offering excellent efficiency and power handling in a compact TDSON package. Its unique features, such as low on-resistance, high efficiency, and fast switching, make it ideal for a wide range of applications, including power management, motor control, and automotive electronics. Although the product status is marked as obsolete, it remains a reliable choice for existing designs and applications where high performance and reliability are critical.

FAQ

What voltage specification is listed for BSC080N03LSGATMA1?
The listed voltage-related specification for BSC080N03LSGATMA1 is 30 V.
What operating temperature range does BSC080N03LSGATMA1 support?
What is BSC080N03LSGATMA1?
Is BSC080N03LSGATMA1 currently in stock?
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