Infineon Technologies_BSC123N08NS3GATMA1
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Infineon Technologies
BSC123N08NS3GATMA1

278-BSC123N08NS3GATMA1
PDF Datasheet
MOSFET N-CH 80V 11A/55A TDSON
26 Weeks

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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
19
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
1870 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Typical Rise Time (ns)
18
PPAP
Unknown
Channel Mode
Enhancement
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BSC123N08NS3GATMA1 Description

BSC123N08NS3GATMA1 Description

The BSC123N08NS3GATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high efficiency and reliability. This device is part of the OptiMOS™ series, known for its superior performance in power electronic applications. With a drain-to-source voltage (Vdss) of 80V and a continuous drain current (Id) of 11A at 25°C (Ta) and 55A at Tc, it offers robust performance in demanding conditions.

BSC123N08NS3GATMA1 Features

  • Technology: MOSFET (Metal Oxide), leveraging advanced manufacturing processes for enhanced performance.
  • Input Capacitance (Ciss): Up to 1870 pF @ 40V, ensuring fast switching capabilities.
  • Gate Charge (Qg): A maximum of 25 nC @ 10V, contributing to high-speed operation.
  • Drain to Source Voltage (Vdss): 80V, suitable for applications requiring high voltage tolerance.
  • Power Dissipation: 2.5W (Ta) and 66W (Tc), indicating its ability to handle high power loads.
  • Rds On (Max): 12.3mOhm @ 33A, 10V, showcasing low on-resistance for high efficiency.
  • Vgs(th) (Max): 3.5V @ 33µA, ensuring reliable threshold voltage performance.
  • Mounting Type: Surface Mount, facilitating integration into compact designs.
  • Package: Tape & Reel (TR), optimizing for automated assembly processes.
  • RoHS Compliance: ROHS3 Compliant, adhering to environmental standards.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating high resistance to moisture-induced degradation.

BSC123N08NS3GATMA1 Applications

The BSC123N08NS3GATMA1 is ideal for a variety of applications where high efficiency, low power loss, and robust performance are critical:

  • Power Management: In power supply units and battery management systems.
  • Automotive Electronics: For electric and hybrid vehicle applications, including motor control.
  • Industrial Control: In motor drives and industrial automation systems.
  • Renewable Energy: For solar inverters and wind power converters.

Conclusion of BSC123N08NS3GATMA1

The BSC123N08NS3GATMA1 stands out with its high voltage and current ratings, low on-resistance, and fast switching capabilities. Its surface mount packaging and compliance with environmental regulations make it a versatile choice for a wide range of power electronic applications. Infineon's OptiMOS™ technology ensures that this MOSFET delivers superior performance and reliability, making it a preferred choice for engineers designing cutting-edge electronic systems.

FAQ

What package or case is BSC123N08NS3GATMA1 available in?
BSC123N08NS3GATMA1 is available in the 8-PowerTDFN package / case.
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