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BSC123N08NS3GATMA1
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BSC123N08NS3GATMA1 Description
BSC123N08NS3GATMA1 Description
The BSC123N08NS3GATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high efficiency and reliability. This device is part of the OptiMOS™ series, known for its superior performance in power electronic applications. With a drain-to-source voltage (Vdss) of 80V and a continuous drain current (Id) of 11A at 25°C (Ta) and 55A at Tc, it offers robust performance in demanding conditions.
BSC123N08NS3GATMA1 Features
- Technology: MOSFET (Metal Oxide), leveraging advanced manufacturing processes for enhanced performance.
- Input Capacitance (Ciss): Up to 1870 pF @ 40V, ensuring fast switching capabilities.
- Gate Charge (Qg): A maximum of 25 nC @ 10V, contributing to high-speed operation.
- Drain to Source Voltage (Vdss): 80V, suitable for applications requiring high voltage tolerance.
- Power Dissipation: 2.5W (Ta) and 66W (Tc), indicating its ability to handle high power loads.
- Rds On (Max): 12.3mOhm @ 33A, 10V, showcasing low on-resistance for high efficiency.
- Vgs(th) (Max): 3.5V @ 33µA, ensuring reliable threshold voltage performance.
- Mounting Type: Surface Mount, facilitating integration into compact designs.
- Package: Tape & Reel (TR), optimizing for automated assembly processes.
- RoHS Compliance: ROHS3 Compliant, adhering to environmental standards.
- Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating high resistance to moisture-induced degradation.
BSC123N08NS3GATMA1 Applications
The BSC123N08NS3GATMA1 is ideal for a variety of applications where high efficiency, low power loss, and robust performance are critical:
- Power Management: In power supply units and battery management systems.
- Automotive Electronics: For electric and hybrid vehicle applications, including motor control.
- Industrial Control: In motor drives and industrial automation systems.
- Renewable Energy: For solar inverters and wind power converters.
Conclusion of BSC123N08NS3GATMA1
The BSC123N08NS3GATMA1 stands out with its high voltage and current ratings, low on-resistance, and fast switching capabilities. Its surface mount packaging and compliance with environmental regulations make it a versatile choice for a wide range of power electronic applications. Infineon's OptiMOS™ technology ensures that this MOSFET delivers superior performance and reliability, making it a preferred choice for engineers designing cutting-edge electronic systems.



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