Infineon Technologies_BSC190N12NS3GATMA1
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Infineon Technologies
BSC190N12NS3GATMA1

278-BSC190N12NS3GATMA1
PDF Datasheet
MOSFET N-CH 120V 8.6A/44A TDSON
20 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
2300 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Product Status
Active
Supplier Device Package
PG-TDSON-8-1
Drain to Source Voltage (Vdss)
120 V
Power Dissipation (Max)
69W (Tc)
Package / Case
8-PowerTDFN
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BSC190N12NS3GATMA1 Description

BSC190N12NS3GATMA1 Description

The BSC190N12NS3GATMA1 is a high-performance N-Channel MOSFET designed and manufactured by Infineon Technologies. This device is part of the OptiMOS™ series and is known for its excellent electrical characteristics and robust performance. With a drain-to-source voltage (Vdss) of 120V, it is suitable for a wide range of applications that require high voltage and current handling capabilities.

BSC190N12NS3GATMA1 Features

  • Technology: MOSFET (Metal Oxide), ensuring high efficiency and low power consumption.
  • Input Capacitance (Ciss): Maximum of 2300 pF @ 60 V, contributing to fast switching speeds.
  • Gate Charge (Qg): Maximum of 34 nC @ 10 V, reducing switching losses.
  • Drain to Source Voltage (Vdss): 120 V, suitable for high-voltage applications.
  • Power Dissipation (Max): 69W (Tc), allowing for high power applications.
  • Rds On (Max): 19mOhm @ 39A, 10V, ensuring low on-resistance for efficient current flow.
  • Current - Continuous Drain (Id): 8.6A (Ta), 44A (Tc), providing high current handling capabilities.
  • Vgs(th) (Max): 4V @ 42µA, offering a wide range of gate voltage operation.
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)

BSC190N12NS3GATMA1 Applications

The BSC190N12NS3GATMA1 is ideal for applications that demand high voltage and current handling, such as:

  • Power Electronics: In power supply designs, motor controls, and inverters where high voltage and current are required.
  • Automotive Electronics: For electric vehicle components, such as battery management systems and electric motor drives.
  • Industrial Controls: In high-power industrial equipment that requires robust and reliable semiconductors.

Conclusion of BSC190N12NS3GATMA1

The BSC190N12NS3GATMA1 stands out for its high voltage and current capabilities, making it a preferred choice for demanding applications in power electronics, automotive, and industrial controls. Its low on-resistance, fast switching speeds, and high power dissipation capabilities provide significant performance benefits over similar models. With its REACH unaffected status and RoHS compliance, it is also an environmentally responsible choice for designers looking to meet stringent regulations.

FAQ

What voltage specification is listed for BSC190N12NS3GATMA1?
The listed voltage-related specification for BSC190N12NS3GATMA1 is 120 V.
What package or case is BSC190N12NS3GATMA1 available in?
What is BSC190N12NS3GATMA1?
What operating temperature range does BSC190N12NS3GATMA1 support?
Are there related or alternative parts for BSC190N12NS3GATMA1?
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