The BSO613SPV from Infineon Technologies is a P-channel MOSFET belonging to the SIPMOS® series, designed for high-efficiency power management applications. With a drain-to-source voltage (Vdss) rating of 60V and a continuous drain current (Id) of 3.44A at 25°C, this device is optimized for low-loss switching and robust performance. It features a low on-resistance (Rds(on)) of 130mΩ at 10V gate drive, ensuring minimal conduction losses. The gate charge (Qg) of 30nC and input capacitance (Ciss) of 875pF contribute to fast switching speeds, making it suitable for high-frequency applications. Packaged in an 8DSO (Tape & Reel), it is ideal for automated surface-mount assembly.
The BSO613SPV excels in power conversion and load switching applications, including:
The BSO613SPV is a high-performance P-channel MOSFET offering low conduction losses, fast switching, and reliable operation in compact designs. While marked as obsolete, its technical merits make it a viable choice for legacy or cost-sensitive projects requiring efficient power handling. Its 8DSO package and surface-mount compatibility further enhance its appeal for space-constrained applications. Engineers seeking a balance of voltage tolerance, current capability, and switching efficiency will find this MOSFET a dependable solution.
Download datasheets and manufacturer documentation for BSO613SPV