Infineon Technologies_BSP170PH6327XTSA1
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Infineon Technologies
BSP170PH6327XTSA1

278-BSP170PH6327XTSA1
PDF Datasheet
MOSFET P-CH 60V 1.9A SOT223-4
22 Weeks

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Tech Specifications

Configuration
Single Dual Drain
Typical Turn-Off Delay Time (ns)
92
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Typical Rise Time (ns)
28
PPAP
Unknown
Channel Mode
Enhancement
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BSP170PH6327XTSA1 Description

BSP170PH6327XTSA1 Description

The BSP170PH6327XTSA1 is a high-performance P-Channel MOSFET from Infineon Technologies, designed for a wide range of applications in the electronics industry. This MOSFET offers excellent electrical characteristics, making it ideal for use in various power management and switching applications. With a drain-to-source voltage of 60V and a continuous drain current of 1.9A at 25°C, the BSP170PH6327XTSA1 is capable of handling demanding power requirements.

BSP170PH6327XTSA1 Features

  • Technology: MOSFET (Metal Oxide) - This advanced technology provides superior performance and reliability.
  • Drain to Source Voltage (Vdss): 60V - Suitable for high-voltage applications.
  • Current - Continuous Drain (Id) @ 25°C: 1.9A - Capable of handling significant current loads.
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V - Offers low on-resistance for efficient power management.
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10V - Minimizes switching losses and improves efficiency.
  • Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V - Reduces parasitic effects and enhances performance.
  • Vgs (Max): ±20V - Provides flexibility in gate voltage requirements.
  • Mounting Type: Surface Mount - Facilitates easy integration into surface-mount technology (SMT) processes.
  • Package: Tape & Reel (TR) - Ideal for automated assembly and high-volume production.

BSP170PH6327XTSA1 Applications

The BSP170PH6327XTSA1 is well-suited for various applications where high performance and reliability are crucial:

  1. Power Management: Due to its high voltage and current ratings, this MOSFET is ideal for power management applications, such as voltage regulation and power distribution in electronic devices.
  2. Motor Control: The low on-resistance and high current capabilities make it suitable for motor control applications, ensuring efficient power delivery and precise control.
  3. Switching Applications: The low gate charge and input capacitance enable fast switching, making it ideal for high-speed switching applications in communication and computing systems.
  4. Automotive Electronics: The robust design and high voltage rating make it suitable for automotive electronics, such as power windows, seat adjustment, and lighting systems.

Conclusion of BSP170PH6327XTSA1

The BSP170PH6327XTSA1 from Infineon Technologies is a versatile and high-performance P-Channel MOSFET that offers excellent electrical characteristics and reliability. Its unique features, such as low on-resistance, low gate charge, and high voltage and current ratings, make it an ideal choice for a wide range of applications in power management, motor control, switching, and automotive electronics. With its advanced technology and robust design, the BSP170PH6327XTSA1 is a reliable and efficient solution for demanding electronics applications.

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