Infineon Technologies_BSP317PE6327
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Infineon Technologies
BSP317PE6327

278-BSP317PE6327
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MOSFET P-CH 250V 430MA SOT223-4

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Tech Specifications

FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
262 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
15.1 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
PG-SOT223-4
Drain to Source Voltage (Vdss)
250 V
Power Dissipation (Max)
1.8W (Ta)
Package / Case
TO-261-4, TO-261AA
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BSP317PE6327 Description

BSP317PE6327 Description

The BSP317PE6327 is a P-channel power MOSFET from Infineon Technologies' SIPMOS® series, designed for high-voltage switching applications. With a 250V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 430mA (Ta), this surface-mount MOSFET is optimized for efficiency in compact designs. Its low gate charge (Qg) of 15.1 nC @ 10V and input capacitance (Ciss) of 262 pF @ 25V ensure fast switching performance, reducing power losses in high-frequency circuits. Packaged in SOT-223-4 with tape-and-reel (TR) mounting, it suits automated assembly processes.

BSP317PE6327 Features

  • High Voltage Tolerance: 250V Vdss rating for robust performance in power circuits.
  • Low On-Resistance: 4Ω (max) @ 430mA, 10V (Rds(on)), minimizing conduction losses.
  • Optimized Gate Drive: 2V (max) threshold voltage (Vgs(th)) and ±20V gate-source voltage (Vgs) compatibility for flexible drive requirements.
  • Thermal Efficiency: 1.8W (Ta) power dissipation ensures reliability under moderate loads.
  • Industry-Standard Package: SOT-223-4 offers a balance of thermal performance and footprint efficiency.
  • REACH Compliance: Unaffected by REACH restrictions, ensuring long-term availability.

BSP317PE6327 Applications

Ideal for:

  • Power Management: DC-DC converters, load switches, and battery protection circuits.
  • Industrial Systems: Motor control, solenoid drivers, and high-voltage signal switching.
  • Consumer Electronics: Energy-efficient power supplies and LED drivers.
  • Automotive Auxiliary Systems: Low-current high-voltage applications (non-safety-critical).

Conclusion of BSP317PE6327

The BSP317PE6327 combines high-voltage capability, low switching losses, and a compact form factor, making it a versatile choice for designers prioritizing efficiency and space constraints. While marked obsolete, its proven reliability in the SIPMOS® series ensures suitability for legacy or cost-sensitive projects. For modern alternatives, Infineon’s newer MOSFET families may offer enhanced performance metrics.

FAQ

What voltage specification is listed for BSP317PE6327?
The listed voltage-related specification for BSP317PE6327 is 250 V.
What operating temperature range does BSP317PE6327 support?
Is BSP317PE6327 currently in stock?
What package or case is BSP317PE6327 available in?
Are there related or alternative parts for BSP317PE6327?
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