Infineon Technologies_BSP89H6327XTSA1
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Infineon Technologies
BSP89H6327XTSA1

278-BSP89H6327XTSA1
PDF Datasheet
MOSFET N-CH 240V 350MA SOT223-4
22 Weeks

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Tech Specifications

Configuration
Single Dual Drain
Typical Turn-Off Delay Time (ns)
15.9
Maximum Gate Source Leakage Current (nA)
10
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
6.4 nC @ 10 V
Typical Rise Time (ns)
3.5
PPAP
Unknown
Channel Mode
Enhancement
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BSP89H6327XTSA1 Description

BSP89H6327XTSA1 Description

The BSP89H6327XTSA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for a wide range of applications in the electronics industry. This device is part of the SIPMOS® series and is known for its superior performance, reliability, and efficiency. With a drain-to-source voltage (Vdss) of 240V and a continuous drain current (Id) of 350mA at 25°C, the BSP89H6327XTSA1 is ideal for applications requiring high voltage and current capabilities.

BSP89H6327XTSA1 Features

  • Technology: MOSFET (Metal Oxide), ensuring high efficiency and low power consumption.
  • Input Capacitance (Ciss): Maximum of 140 pF at 25 V, contributing to fast switching speeds.
  • Gate Charge (Qg): Maximum of 6.4 nC at 10 V, reducing switching losses and improving efficiency.
  • Rds On (Max): 6 Ohms at 350mA and 10V, providing low on-resistance for minimal power dissipation.
  • Vgs(th) (Max): 1.8V at 108µA, ensuring reliable threshold voltage performance.
  • Power Dissipation (Max): 1.8W at Ta, suitable for various power applications.
  • Mounting Type: Surface Mount, facilitating easy integration into circuit designs.
  • Package: Tape & Reel (TR), ideal for automated assembly processes.
  • REACH Status: REACH Unaffected, ensuring compliance with environmental regulations.
  • RoHS Status: ROHS3 Compliant, adhering to strict environmental standards.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), allowing for flexible storage and handling conditions.

BSP89H6327XTSA1 Applications

The BSP89H6327XTSA1 is well-suited for various applications where high voltage and current capabilities are required. Some specific use cases include:

  1. Power Management: In power supply designs, the BSP89H6327XTSA1 can efficiently manage high voltage and current demands.
  2. Motor Control: The device's high voltage and current ratings make it ideal for controlling electric motors in various applications, such as industrial automation and robotics.
  3. Automotive Electronics: The BSP89H6327XTSA1 can be used in automotive electronics for applications like power windows, seat adjustment, and other high-voltage systems.
  4. Industrial Control Systems: In industrial control systems, the device can handle high voltage and current requirements for reliable operation in demanding environments.

Conclusion of BSP89H6327XTSA1

The BSP89H6327XTSA1 from Infineon Technologies is a versatile and high-performance N-Channel MOSFET, offering superior technical specifications and performance benefits. Its unique features, such as low on-resistance, high input capacitance, and low gate charge, make it an ideal choice for various applications in power management, motor control, automotive electronics, and industrial control systems. With its compliance with REACH and RoHS regulations, the BSP89H6327XTSA1 is not only a powerful device but also an environmentally responsible choice for electronics designers.

FAQ

What operating temperature range does BSP89H6327XTSA1 support?
BSP89H6327XTSA1 has an operating temperature range of -55°C ~ 150°C (TJ).
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