Infineon Technologies_BSS169H6327XTSA1
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Infineon Technologies
BSS169H6327XTSA1

278-BSS169H6327XTSA1
PDF Datasheet
MOSFET N-CH 100V 170MA SOT23-3
22 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
11
Input Capacitance (Ciss) (Max) @ Vds
68 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
2.8 nC @ 7 V
Typical Rise Time (ns)
2.7
PPAP
Unknown
Channel Mode
Depletion
Typical Turn-On Delay Time (ns)
2.9
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BSS169H6327XTSA1 Description

BSS169H6327XTSA1 Description

The BSS169H6327XTSA1 is a high-performance N-Channel MOSFET from Infineon Technologies. It is designed to deliver exceptional performance in a wide range of applications, including power management, motor control, and signal processing. With a drain-to-source voltage of 100V and a continuous drain current of 170mA, this MOSFET is capable of handling demanding power requirements. Its surface-mount packaging makes it ideal for use in compact, space-constrained designs.

BSS169H6327XTSA1 Features

  • Technology: MOSFET (Metal Oxide) - Provides excellent electrical characteristics and reliability.
  • Depletion Mode FET Feature: Allows for precise control of current flow, making it suitable for a wide range of applications.
  • Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V - Offers fast switching capabilities.
  • Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V - Minimizes power loss during switching.
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V - Ensures low on-resistance for efficient power delivery.
  • Vgs(th) (Max) @ Id: 1.8V @ 50µA - Provides a low threshold voltage for easy gate drive.
  • Power Dissipation (Max): 360mW (Ta) - Allows for high power dissipation in demanding applications.
  • RoHS Status: ROHS3 Compliant - Ensures environmental compliance and sustainability.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Suitable for use in a wide range of environments.

BSS169H6327XTSA1 Applications

The BSS169H6327XTSA1 is ideal for use in various applications where high performance and reliability are critical. Some specific use cases include:

  1. Power Management: Its high drain-to-source voltage and low on-resistance make it suitable for power management applications in consumer electronics, industrial equipment, and automotive systems.
  2. Motor Control: The BSS169H6327XTSA1's ability to handle high currents and voltages makes it an excellent choice for motor control applications, such as in electric vehicles, robotics, and industrial automation.
  3. Signal Processing: Its fast switching capabilities and low input capacitance make it ideal for use in signal processing applications, such as audio amplifiers, filters, and communication systems.

Conclusion of BSS169H6327XTSA1

The BSS169H6327XTSA1 is a versatile and high-performance N-Channel MOSFET from Infineon Technologies. Its unique features, such as depletion mode operation, low on-resistance, and fast switching capabilities, make it an excellent choice for a wide range of applications. With its RoHS compliance and moisture sensitivity level of 1, the BSS169H6327XTSA1 is also environmentally friendly and suitable for use in various environments. Overall, this MOSFET offers a reliable and efficient solution for power management, motor control, and signal processing applications.

FAQ

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The standard lead time for BSS169H6327XTSA1 is 22 Weeks.
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