Infineon Technologies_BSS169IXTSA1
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Infineon Technologies
BSS169IXTSA1

278-BSS169IXTSA1
PDF Datasheet
MOSFET N-CH 100V 190MA SOT23-3
22 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
11
Input Capacitance (Ciss) (Max) @ Vds
51 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
2.1 nC @ 7 V
Typical Rise Time (ns)
2.7
PPAP
No
Channel Mode
Depletion
Typical Turn-On Delay Time (ns)
2.9
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BSS169IXTSA1 Description

BSS169IXTSA1 Description

The BSS169IXTSA1 is a high-performance MOSFET (Metal Oxide) device manufactured by Infineon Technologies. This N-channel, depletion mode device is designed for surface mount applications and offers a range of technical specifications that make it suitable for various electronic circuits. With a drain to source voltage (Vdss) of 100V and a continuous drain current (Id) of 190mA at 25°C, the BSS169IXTSA1 delivers reliable performance in demanding applications.

BSS169IXTSA1 Features

  • Input Capacitance (Ciss): The BSS169IXTSA1 boasts a maximum input capacitance of 51 pF at 25V, ensuring fast switching speeds and minimal power loss.
  • Gate Charge (Qg): With a maximum gate charge of 2.1 nC at 7V, this MOSFET minimizes power consumption and enhances efficiency.
  • Power Dissipation: Capable of handling up to 360mW of power dissipation at ambient temperature (Ta), the BSS169IXTSA1 is suitable for high-power applications.
  • Technology: Utilizing advanced MOSFET technology, the BSS169IXTSA1 offers superior performance and reliability.
  • Rds On (Max): With a maximum on-resistance of 2.9 Ohms at 190mA and 10V, this device provides low power loss and high efficiency.
  • Vgs(th) (Max): The BSS169IXTSA1 has a threshold voltage of 1.8V at 50µA, ensuring reliable operation across a wide range of input voltages.
  • Mounting Type: Designed for surface mount applications, this MOSFET is ideal for compact and space-constrained designs.

BSS169IXTSA1 Applications

The BSS169IXTSA1 is an excellent choice for various applications due to its high performance and reliability. Some ideal use cases include:

  • Power Management: In power supply circuits, the BSS169IXTSA1's low on-resistance and high voltage rating make it suitable for efficient power management.
  • Automotive Electronics: The device's robust performance and ability to handle high voltages make it ideal for automotive electronics, such as battery management systems and motor controls.
  • Industrial Control: In industrial control systems, the BSS169IXTSA1's high power dissipation and reliability ensure stable operation in demanding environments.

Conclusion of BSS169IXTSA1

The BSS169IXTSA1 is a versatile and high-performance MOSFET that offers a range of technical specifications and features that make it ideal for various applications. Its low on-resistance, high voltage rating, and advanced technology provide superior performance and reliability in demanding electronic circuits. With its unique features and advantages over similar models, the BSS169IXTSA1 is a top choice for power management, automotive electronics, and industrial control applications.

FAQ

What is the standard lead time for BSS169IXTSA1?
The standard lead time for BSS169IXTSA1 is 22 Weeks.
What operating temperature range does BSS169IXTSA1 support?
Are there related or alternative parts for BSS169IXTSA1?
What voltage specification is listed for BSS169IXTSA1?
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