Infineon Technologies_BSS670S2L
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Infineon Technologies
BSS670S2L

278-BSS670S2L
PDF Datasheet
MOSFET N-CH 55V 540MA SOT23-3

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Tech Specifications

Operating Temperature
-55°C ~ 150°C (TJ)
FET Feature
-
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
75 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
2.26 nC @ 10 V
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Obsolete
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BSS670S2L Description

BSS670S2L Description

The BSS670S2L is a single N-Channel MOSFET from Infineon Technologies, designed for high performance and reliability in various electronic applications. This device features a drain-to-source voltage (Vdss) of 55V, a continuous drain current (Id) of 540mA at 25°C, and a maximum gate-source voltage (Vgs) of ±20V. The BSS670S2L is packaged in a small SOT-23-3 package, making it suitable for surface mount applications.

BSS670S2L Features

  • OptiMOS™ Series: The BSS670S2L belongs to the OptiMOS™ series, known for its excellent performance and reliability in power management applications.
  • Low On-Resistance (Rds On): With a maximum Rds On of 650mOhm at 270mA and 10V, the BSS670S2L offers low on-resistance for efficient power dissipation.
  • High Input Capacitance (Ciss): The device has a maximum input capacitance of 75 pF at 25V, ensuring fast switching and reduced power consumption.
  • Low Gate Charge (Qg): The BSS670S2L has a maximum gate charge of 2.26 nC at 10V, contributing to its fast switching capabilities.
  • Surface Mount Technology: The device is designed for surface mount applications, making it suitable for compact and space-constrained designs.
  • REACH Unaffected: The BSS670S2L is classified as REACH unaffected, ensuring compliance with European chemical regulations.

BSS670S2L Applications

The BSS670S2L is ideal for various applications where high performance and reliability are crucial:

  1. Power Management: Due to its low on-resistance and high input capacitance, the BSS670S2L is suitable for power management applications, such as battery protection circuits and power supplies.
  2. Motor Control: The device's high drain-to-source voltage and continuous drain current make it suitable for motor control applications, including brushless DC motors and stepper motors.
  3. Automotive Electronics: The BSS670S2L can be used in automotive electronics, such as window lift systems, seat adjustment mechanisms, and infotainment systems.
  4. Industrial Control: The device's robust performance makes it suitable for industrial control applications, including motor drives and process control systems.

Conclusion of BSS670S2L

The BSS670S2L is a high-performance N-Channel MOSFET from Infineon Technologies, offering low on-resistance, high input capacitance, and fast switching capabilities. Its OptiMOS™ technology, combined with its surface mount packaging, makes it an ideal choice for power management, motor control, automotive electronics, and industrial control applications. However, it is important to note that the BSS670S2L is currently classified as obsolete, which may limit its availability for new designs.

FAQ

What voltage specification is listed for BSS670S2L?
The listed voltage-related specification for BSS670S2L is 55 V.
What operating temperature range does BSS670S2L support?
What is BSS670S2L?
Is BSS670S2L currently in stock?
What is the mounting type of BSS670S2L?
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