Infineon Technologies_BSZ900N20NS3GATMA1
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Infineon Technologies
BSZ900N20NS3GATMA1

278-BSZ900N20NS3GATMA1
PDF Datasheet
MOSFET N-CH 200V 15.2A 8TSDSON
20 Weeks

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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
10
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
11.6 nC @ 10 V
Typical Rise Time (ns)
4
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
5
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BSZ900N20NS3GATMA1 Description

BSZ900N20NS3GATMA1 Description

The BSZ900N20NS3GATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for demanding applications that require high efficiency and reliability. With a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 15.2A at 25°C, this MOSFET is ideal for a wide range of power electronics applications.

BSZ900N20NS3GATMA1 Features

  • High Input Capacitance (Ciss): With a maximum of 920 pF @ 100V, the BSZ900N20NS3GATMA1 offers low gate charge (Qg) of 11.6 nC @ 10V, ensuring fast switching and reduced power consumption.
  • Low Rds On: The maximum Rds On of 90mOhm @ 7.6A, 10V contributes to high efficiency and low power loss in power conversion applications.
  • Robust Voltage Range: The Vgs (Max) of ±20V and Vgs(th) (Max) of 4V @ 30µA provide a wide operating voltage range and ensure reliable operation in various conditions.
  • Surface Mount Technology: The BSZ900N20NS3GATMA1 is designed for surface mount applications, making it suitable for compact and high-density circuit designs.
  • Compliance and Regulations: This MOSFET is REACH Unaffected, ROHS3 Compliant, and has an ECCN of EAR99, ensuring compliance with international regulations.

BSZ900N20NS3GATMA1 Applications

The BSZ900N20NS3GATMA1 is ideal for various applications where high efficiency, reliability, and performance are critical:

  • Power Supplies: Due to its high voltage and current ratings, this MOSFET is suitable for power supply designs, including SMPS and DC-DC converters.
  • Industrial Automation: Its robustness and high power dissipation capability make it suitable for motor control and industrial automation applications.
  • Automotive Electronics: The BSZ900N20NS3GATMA1 can be used in automotive applications such as electric power steering and battery management systems.

Conclusion of BSZ900N20NS3GATMA1

The BSZ900N20NS3GATMA1 from Infineon Technologies is a high-performance N-Channel MOSFET that offers a combination of high voltage, low Rds On, and fast switching capabilities. Its compliance with international regulations and robust design make it an ideal choice for a wide range of power electronics applications, including power supplies, industrial automation, and automotive electronics. With its unique features and advantages, the BSZ900N20NS3GATMA1 stands out as a reliable and efficient solution for demanding applications.

FAQ

What package or case is BSZ900N20NS3GATMA1 available in?
BSZ900N20NS3GATMA1 is available in the 8-PowerTDFN package / case.
Is BSZ900N20NS3GATMA1 currently in stock?
What operating temperature range does BSZ900N20NS3GATMA1 support?
What is the mounting type of BSZ900N20NS3GATMA1?
Are there related or alternative parts for BSZ900N20NS3GATMA1?
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