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BTS282ZE3180AATMA2

BTS282ZE3180AATMA2 Description

The BTS282ZE3180AATMA2 from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power management applications. Part of the TEMPFET® series, this surface-mount device offers a 49V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 80A (Tc), making it suitable for high-current switching. With an ultra-low on-resistance (Rds On) of 6.5mOhm at 36A, 10V, it minimizes conduction losses, enhancing efficiency in power systems. The MOSFET integrates a temperature-sensing diode, enabling precise thermal monitoring for improved reliability. Packaged in TO263-7 (D²PAK-7) and supplied in tape & reel (TR), it is optimized for automated assembly.

BTS282ZE3180AATMA2 Features

• Low Rds On: 6.5mOhm @ 10V, reducing power dissipation.
• High Current Handling: 80A continuous drain current (Tc).
• Temperature Sensing Diode: Real-time thermal management.
• Robust Gate Drive: Supports 4.5V–10V drive voltage for flexible control.
• Fast Switching: Gate charge (Qg) of 232nC @ 10V ensures quick transitions.
• High Power Dissipation: 300W (Tc) rating for thermally challenging environments.
• Compliance: ROHS3, REACH unaffected, and ECCN EAR99 certified.
• Wide Vgs Range: ±20V gate-to-source voltage tolerance.

BTS282ZE3180AATMA2 Applications

This MOSFET excels in applications requiring high efficiency and thermal stability, such as:

• DC-DC Converters: Optimized for synchronous rectification in buck/boost topologies.
• Motor Drives: Ideal for H-bridge configurations in industrial and automotive systems.
• Power Supplies: High-current switching in server/telecom PSUs.
• Battery Management: Load switching in EV/HEV battery systems.
• Solar Inverters: Low-loss switching for renewable energy systems.

Conclusion of BTS282ZE3180AATMA2

The BTS282ZE3180AATMA2 combines low conduction losses, high current capability, and integrated thermal monitoring, making it a standout choice for power electronics. While marked as obsolete, its performance metrics—such as the 6.5mOhm Rds On and 80A current rating—ensure it remains viable for legacy designs or replacements. Its TO263-7 package and temperature-sensing feature further enhance its suitability for high-reliability applications. Engineers should evaluate alternative Infineon solutions for new designs but can leverage this MOSFET’s strengths in existing systems.